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Inductively coupled plasma etching of bulk 6H-SiC and thin-film SiCN in NF3 chemistries
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-5845-3032
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1998 (English)In: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 16, no 4, 2204-2209 p.Article in journal (Refereed) Published
Abstract [en]

A parametric study of the etching characteristics of 6H p+ and n+ SiC and thin-film SiC0.5N0.5 in inductively coupled plasma (ICP) NF3/O2 and NF3/Ar discharges has been performed. The etch rates in both chemistries increase monotonically with NF3 percentage and rf chuck power. The etch rates go through a maximum with increasing ICP source power, which is explained by a trade-off between the increasing ion flux and the decreasing ion energy. The anisotropy of the etched features is also a function of ion flux, ion energy and atomic fluorine neutral concentration. Indium-tin-oxide masks display relatively good etch selectivity over SiC (maximum of ∌70:1), while photoresist etches more rapidly than SiC. The surface roughness of SiC is essentially independent of plasma composition for NF3/O2 discharges, while extensive surface degradation occurs for SiCN under high NF3:O2 conditions. © 1998 American Vacuum Society.

Place, publisher, year, edition, pages
1998. Vol. 16, no 4, 2204-2209 p.
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-85408OAI: oai:DiVA.org:kth-85408DiVA: diva2:499901
Note
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