Temperature stability of cobalt Schottky contacts on n- and p-type 6H silicon carbide
1993 (English)In: Applied Surface Science, ISSN 0169-4332, E-ISSN 1873-5584, Vol. 73, no C, 316-321 p.Article in journal (Refereed) Published
Rectifying Schottky contacts have been manufactured on n- and p-type 6H silicon carbide using e-beam evaporation of cobalt. Heat treatments in the 300 to 1100Â°C temperature range have been made to study the feasibility of high temperature contacts in this material system. Rutherford backscattering spectrometry and X-ray diffraction have revealed the formation of different cobalt silicides (Co2Si, CoSi, and CoSi2) at higher temperatures than for the Co/Si system. No evidence of silicidation was found below 600Â°C and SEM micrographs revealed carbon agglomerates at the surface after silicidation. Electrical properties have been examined using I-V and C-V measurements, and the barrier heights of cobalt and Co2Si were evaluated. The contacts displayed excellent forward I-V characteristics with good linearity over 3-6 decades and were rectifying even after heat treatments at 800Â°C. Â© 1993.
Place, publisher, year, edition, pages
1993. Vol. 73, no C, 316-321 p.
Cobalt, Heat resistance, Schottky barrier diodes, Silicon carbide, Stability, Cobalt Schottky contacts, Cobalt silicides, Temperature stability, Refractory materials
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-85399OAI: oai:DiVA.org:kth-85399DiVA: diva2:499908
Correspondence Address: Lundberg, N.; Royal Institute of Technology, Solid State Electronics, P.O. Box 1298, S-164 28 Kista, Sweden NR 201408052012-02-132012-02-132012-02-13Bibliographically approved