Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Temperature stability of cobalt Schottky contacts on n- and p-type 6H silicon carbide
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0001-8108-2631
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-5845-3032
1993 (English)In: Applied Surface Science, ISSN 0169-4332, E-ISSN 1873-5584, Vol. 73, no C, 316-321 p.Article in journal (Refereed) Published
Abstract [en]

Rectifying Schottky contacts have been manufactured on n- and p-type 6H silicon carbide using e-beam evaporation of cobalt. Heat treatments in the 300 to 1100°C temperature range have been made to study the feasibility of high temperature contacts in this material system. Rutherford backscattering spectrometry and X-ray diffraction have revealed the formation of different cobalt silicides (Co2Si, CoSi, and CoSi2) at higher temperatures than for the Co/Si system. No evidence of silicidation was found below 600°C and SEM micrographs revealed carbon agglomerates at the surface after silicidation. Electrical properties have been examined using I-V and C-V measurements, and the barrier heights of cobalt and Co2Si were evaluated. The contacts displayed excellent forward I-V characteristics with good linearity over 3-6 decades and were rectifying even after heat treatments at 800°C. © 1993.

Place, publisher, year, edition, pages
1993. Vol. 73, no C, 316-321 p.
Keyword [en]
Cobalt, Heat resistance, Schottky barrier diodes, Silicon carbide, Stability, Cobalt Schottky contacts, Cobalt silicides, Temperature stability, Refractory materials
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-85399OAI: oai:DiVA.org:kth-85399DiVA: diva2:499908
Note
Correspondence Address: Lundberg, N.; Royal Institute of Technology, Solid State Electronics, P.O. Box 1298, S-164 28 Kista, Sweden NR 20140805Available from: 2012-02-13 Created: 2012-02-13 Last updated: 2017-12-07Bibliographically approved

Open Access in DiVA

No full text

Other links

http://www.scopus.com/inward/record.url?eid=2-s2.0-0027906661&partnerID=40&md5=f8512f4eccc9b9d1c078138b11608d57

Authority records BETA

Zetterling, Carl-Mikael

Search in DiVA

By author/editor
Zetterling, Carl-MikaelÖstling, Mikael
By organisation
Integrated Devices and Circuits
In the same journal
Applied Surface Science
Other Electrical Engineering, Electronic Engineering, Information Engineering

Search outside of DiVA

GoogleGoogle Scholar

urn-nbn

Altmetric score

urn-nbn
Total: 40 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf