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Junction barrier Schottky diodes in 6H SiC
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0001-8108-2631
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-5845-3032
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1998 (English)In: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 42, no 9, 1757-1759 p.Article in journal (Refereed) Published
Abstract [en]

Junction barrier Schottky (JBS) diodes in 6H SiC have been fabricated and characterised electrically. This device, demonstrated in silicon technology, has the advantage of a low forward voltage drop comparable to that of Schottky diodes, as well as a high blocking voltage and low reverse leakage current of a pn junction. This is especially attractive for wide bandgap materials such as SiC in which pn junctions have a large forward voltage drop. The devices were capable of blocking up to 1100 V with a leakage current density of 0.15 A cm-2, limited by the leakage when the drift region was fully depleted, or breakdown of the SiC material itself. The forward conduction was limited by an on-resistance of 20 mΩ cm2, resulting in forward voltage drops of 2.6 V at 100 A cm-2. © 1998 Published by Elsevier Science Ltd. All rights reserved.

Place, publisher, year, edition, pages
1998. Vol. 42, no 9, 1757-1759 p.
Keyword [en]
Current density, Electric potential, Electric resistance, Leakage currents, Semiconductor junctions, Silicon carbide, Junction barrier Schottky (JBS) diodes, Schottky barrier diodes
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-85409OAI: oai:DiVA.org:kth-85409DiVA: diva2:499913
Note
References: Crofton, J., Sriram, S., (1996) IEEE Trans. Electron Devices, 43, p. 2305; Bhatnagar, M., Baliga, B.J., Kirk, H.R., Rozgonyi, G.A., (1996) IEEE Trans. Electron Devices, 43, p. 150; Kimoto, T., Urushidani, T., Kobayashi, S., Matsunami, H., (1993) IEEE Electron Device Lett., 14, p. 548; Lundberg, N., Östling, M., TÀgtström, P., Jansson, U., (1996) J. Electrochem. Soc., 143, p. 1662; Baliga, B.J., (1984) IEEE Electron Device Lett., 5, p. 194; Baliga, B.J., (1985) Solid-State Electron., 28, p. 1089; Biersack, J.P., Haggmark, L.G., (1980) Nucl. Instrum. Methods, 174, p. 257; Ziegler, J.F., Biersack, J.P., Littmark, U., (1985) The Stopping and Range of Ions in Solids, 1. , ed. J. F. Ziegler. Pergamon, New York; Pensl, G., Afanas'ev, V.V., Bassler, M., Schadt, M., Treffer, T., Heindl, J., Strunk, H.P., Choyke, W.J., (1995) Inst. Phys. Conf. Ser., 142, p. 275; Waldrop, J.R., Grant, R.W., (1993) Appl. Phys. Lett., 62, p. 2685; Itoh, A., Kimoto, T., Matsunami, H., (1995) Inst. Phys. Conf. Ser., 142, p. 689 NR 20140805Available from: 2012-02-13 Created: 2012-02-13 Last updated: 2017-12-07Bibliographically approved

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Zetterling, Carl-Mikael

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