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A novel UMOS capacitor test structure for SiC devices
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0001-8108-2631
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-5845-3032
1996 (English)In: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 39, no 9, p. 1396-1397Article in journal (Refereed) Published
Abstract [en]

In this paper we propose the use of U-grooved MOS capacitors to investigate oxides intended for U-grooved MOSFETs and IGBTs in silicon carbide. The UMOS capacitor uses only two mask layers, and has vertically etched walls and a gate contact that overlaps the step. We have manufactured UMOS capacitors in n-type 6H SiC with dry thermal gate oxides, and compared the capacitance voltage characteristics to those of flat reference capacitors. It was found that the general appearance of capacitance-voltage curves was unchanged by the addition of the vertical grooves, although the leakage through the oxide was increased. The oxide thickness on the sidewalls was approximately the same as on the flat parts of the devices. Copyright © 1996 Elsevier Science Ltd.

Place, publisher, year, edition, pages
1996. Vol. 39, no 9, p. 1396-1397
Keywords [en]
Bipolar transistors, Capacitance, Capacitors, Electric contacts, Gates (transistor), Oxides, Reactive ion etching, Semiconducting films, Semiconductor device manufacture, Semiconductor device structures, Silicon carbide, Silicon nitride, Capacitance voltage characteristics, Insulated gate bipolar transistors, Mask layers, Oxide thickness, Thermal gate oxides, U grooved MOS capacitors, MOSFET devices
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-85401DOI: 10.1016/0038-1101(96)80001-ZOAI: oai:DiVA.org:kth-85401DiVA, id: diva2:499939
Note
References: Bhatnagar, M., Alok, D., Baliga, B.J., (1993) Proc. 5th Int. Conf. on Silicon Carbide and Related Materials Conf., 137, p. 703. , Institute of Physics Conference Series; Palmour, J.W., Edmond, J.A., Kong, H.S., Carter, C.H., (1993) IECEC-91, Proc. 28th Intersociety Energy Conversion Conf., p. 1249; Palmour, J.W., Carter, C.H., Weitzel, C.E., Nordquist, K.J., (1994) Diamond, SiC and Nitride Wide-Bandgap Semiconductors, 339, p. 133. , Materials Research Society; Bakowski, M., Gustafsson, U., Ramberg, L.P., (1994) ESSDERC '94, p. 761. , Editions FrontiÚres; Davis, R.F., Kelner, G., Shur, M., Palmour, J.W., Edmond, J.A., (1991) Proc. IEEE, 79, p. 677; Ivanov, P.A., Chelnokov, V.E., (1992) Semicond. Sci. Technol., 7, p. 863 NR 20140805Available from: 2012-02-13 Created: 2012-02-13 Last updated: 2017-12-07Bibliographically approved

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Zetterling, Carl-Mikael

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