Comparison of thermal gate oxides on silicon and carbon face p-type 6H silicon carbide
1994 (English)In: Materials Research Society Symposium - Proceedings, San Francisco, CA, USA, 1994, Vol. 339, no Pittsburgh, PA, United States, 209-214 p.Conference paper (Refereed)
Monocrystalline 6H silicon carbide samples (n-type and p-type) with both carbon face and silicon face have been used to investigate gate oxide quality. The oxides were thermally grown in a dry oxygen ambient at 1523 K with or without the addition of TCA (Trichloroethane), or in wet pyrogenic steam at 1473 K. POCl3 doped polysilicon gates were used for electrical characterisation by capacitance-voltage measurements and breakdown field measurements. Large flatband voltage shifts indicate fixed oxide charges up to 1013 cm-2. The incorporation of aluminum in the oxides was monitored using SIMS (Secondary Ion Mass Spectrometry). Surprisingly high signals were interpreted as evidence of an aluminum-oxygen compound having been formed (ie Al2O3).
Place, publisher, year, edition, pages
San Francisco, CA, USA, 1994. Vol. 339, no Pittsburgh, PA, United States, 209-214 p.
, Proceedings of the 1994 MRS Spring Meeting
Aluminum, Carbon, Current voltage characteristics, Doping (additives), Electric properties, Electric variables measurement, Oxides, Quality assurance, Secondary ion mass spectrometry, Semiconducting silicon compounds, Silicon, Silicon carbide, Flatband voltage shift, Polysilicon gates, Thermal gate oxides, Gates (transistor)
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-85400OAI: oai:DiVA.org:kth-85400DiVA: diva2:499949
Correspondence Address: Zetterling, Carl-Mikael; Royal Inst of Technology, Kista-Stockholm, Sweden NR 201408052012-02-132012-02-132012-02-13Bibliographically approved