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Comparison of SiO2 and AlN as gate dielectric for SiC MOS structures
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0001-8108-2631
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-5845-3032
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1998 (English)In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 264-268, 877-880 p.Article in journal (Refereed) Published
Abstract [en]

The electrical properties of silicon dioxide (thermal oxidation) and aluminum nitride (metal organic chemical vapor deposition) have been compared for use as gate dielectric for silicon carbide metal insulator semiconductor structures. High frequency capacitance voltage measurements at room temperature were used to investigate fixed charge and deep interface states. The deep interface states could be passivated with hydrogen if introduced during growth of silicon dioxide. Although results are promising for aluminum nitride, the morphology of the films grown so far do not allow a fair comparison with silicon dioxide.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 1998. Vol. 264-268, 877-880 p.
Keyword [en]
Aluminum Nitride, Metal Organic Chemical Vapor Deposition, Silicon Dioxide, Thermal Oxidation, Current voltage characteristics, Dielectric films, Electric charge, Film growth, Interfaces (materials), Metallorganic chemical vapor deposition, Morphology, Nitrides, Semiconductor device structures, Silica, Thermooxidation, Gate dielectrics, MOS devices
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-85410Scopus ID: 2-s2.0-0031648334OAI: oai:DiVA.org:kth-85410DiVA: diva2:499953
Note

References: Bhatnagar, M., Baliga, B.J., (1993) IEEE Trans. Electron Devices, 40, p. 645; Friedrichs, P., Burte, E.P., Schörner, R., (1994) Appl. Phys. Lett., 65, p. 1665; Shenoy, J.N., Chindalore, G.L., Melloch, M.R., Cooper Jr., J.A., Palmour, J.W., Irvine, K.G., (1995) J. Elec. Mater., 24, p. 303; Sridevan, S., McLarty, P.K., Baliga, J.B., (1997) Proc. ISPSD '97, p. 153; Chaudhry, M.I., Berry, W.B., (1989) Journal of Material Research, 4, p. 1491; Jayatirtha, H.N., Spencer, M.G., (1995) Inst. Phys. Conf. Ser., 142, p. 61; Strite, S., Morkoc, H., (1992) J. Vac. Sci. Technol. B, 10, p. 1237; Zetterling, C.-M., Wongchotigul, K., Spencer, M.G., Harris, C.I., Wong, S.S., Östling, M., (1996) Mat. Res. Soc. Symp. Proc., 423, p. 667; Aboelfotoh, M.O., Kern, R.S., Tanaka, S., Davis, R.F., Harris, C.I., (1996) Appl. Phys. Lett., 69, p. 2873; Goetzberger, A., Irvin, J.C., (1968) IEEE Trans. Electron Devices, 15, p. 1009; Stein Von Kamienski, E.G., Leonhard, C., Scharnholz, S., Gölz, A., Kurz, H., Proc. ECSCRM'96; Jenq, C.-S., (1978), Ph.D. Thesis, Princeton UniversityZetterling, C.-M., Östling, M., Wongchotigul, K., Spencer, M.G., Tang, X., Harris, C.I., Nordell, N., Wong, S.S., (1997) J. Appl. Phys., 82. , in press; Benjamin, M.C., Wang, C., Davis, R.F., Nemanich, R.J., (1994) Appl. Phys. Lett., 64, p. 3288 NR 20140805. NR 20160304

Available from: 2012-02-13 Created: 2012-02-13 Last updated: 2017-12-07Bibliographically approved

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