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Junction barrier Schottky diodes in 4H-SiC and 6H-SiC
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0001-8108-2631
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-5845-3032
1998 (English)In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 264-268, no PART 2, 1061-1064 p.Article in journal (Refereed) Published
Abstract [en]

The Junction Barrier Schottky (JBS) diode in silicon carbide is a promising candidate for a low-leakage power rectifier for high switching frequencies and elevated temperature operation. It has the advantage of a low forward voltage drop while keeping a low leakage current at high blocking voltage. JBS devices have been fabricated in 4H SiC and 6H SiC and then electrically characterised in comparison with pn and Schottky diodes on the same wafer. The JBS devices reached blocking voltages up to 1.0 kV at a leakage current density of 13 ÎŒA/cm2 and the forward conduction was limited by an on-resistance close to the theoretical value.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 1998. Vol. 264-268, no PART 2, 1061-1064 p.
Keyword [en]
Junction Barrier Schottky, Power Rectifier, Current density, Electric rectifiers, Leakage currents, Power electronics, Semiconducting silicon compounds, Semiconductor junctions, Silicon carbide, Forward voltage drop, Power rectifiers, Schottky barrier diodes
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-85413OAI: oai:DiVA.org:kth-85413DiVA: diva2:499956
Note
References: Bhatnagar, M., Baliga, B.J., Kirk, H.R., Rozgonyi, G.A., (1996) IEEE Trans. Electron Devices, 43, p. 150; Crofton, J., Sriram, S., (1996) IEEE Trans. Electron Devices, 43, p. 2305; Baliga, B.J., (1984) IEEE Electron Device Letters, 5, p. 194; Baliga, B.J., (1985) Solid-State Electron., 28, p. 1089; Biersack, J.P., Haggmark, L.G., (1980) Nucl. Instr. and Meth., 174, p. 257; Pensl, G., Afanas'ev, V.V., Bassler, M., Schadt, M., Troffer, T., Heindl, J., Strunk, H.P., Choyke, W.J., (1995) Inst. Phys. Conf. Ser., 142, p. 275; Afanas'ev, V.V., Bassler, M., Pensl, G., Schulz, M.J., (1996) J. Appl. Phys., 79, p. 3108; Schaffer, W.J., Negley, G.H., Irvine, K.G., Palmour, J.W., (1994) Mat. Res. Soc. Symp. Proc., 339, p. 595; Itoh, A., Kimoto, T., Matsunami, H., (1995) Inst. Phys. Conf. Ser., 142, p. 689 NR 20140805Available from: 2012-02-13 Created: 2012-02-13 Last updated: 2017-12-07Bibliographically approved

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Zetterling, Carl-Mikael

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