Thermal stability of sputtered TiN as metal gate on 4H-SiC
1998 (English)In: Materials Science Forum, ISSN 0255-5476, Vol. 264-268, no PART 2, 805-808 p.Article in journal (Refereed) Published
MOS-structures were made with TiN as metal gate on 4H-SiC. The thermal stability and electrical properties of this gate was determined by CV-measurements. Comparison with Al gates showed that TiN worked well as a gate metal on 4H-SiC. The hysteresis and density of the interface states were comparable for the two gate types. The n-type samples had low leakage and a flatband voltage of a few volts, while the p-type samples had high leakage and a fiatband voltage of around -20 V. The structure showed poor characteristics after a 700Â°C anneal for one hour, which is probably caused by the formation of titanium silicide. The TiN films had a lower content of nitrogen than expected, which could influence the stability.
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 1998. Vol. 264-268, no PART 2, 805-808 p.
CV-Measurements, Gate Metal, MOS, Thermal Stability, TiN, Annealing, Capacitance measurement, Composition effects, Gates (transistor), Hysteresis, Semiconducting films, Semiconducting silicon compounds, Silicon carbide, Thermal effects, Thermodynamic stability, Titanium nitride, Voltage measurement, Flatband voltage, Titanium silicide, MOS devices
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-85412OAI: oai:DiVA.org:kth-85412DiVA: diva2:499960
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