Investigation of thermal properties in fabricated 4H-SiC high-power bipolar transistors
2002 (English)In: Materials Science Forum, ISSN 0255-5476, Vol. 389-393, no 2, 1337-1340 p.Article in journal (Refereed) Published
Silicon Carbide bipolar junction transistors have been fabricated and investigated. The transistors had a maximmn current gain of approximately 10 times, and a breakdown voltage of up to 600 V. When operated at high power densities the device showed a clear self-heating effect, decreasing the current gain. The junction temperature was extracted during self-heating to approximately 150 Â°C, using the assumption that the current gain only depends on temperature. Thermal images of a device under operation were also recorded using an infrared camera, showing a significant temperature increase in the vicinity of the device. Physical device simulations have been used to analyze the measured data. The thermal conductivity is fitted to model the measured self-heating, and the lifetime in the base is fitted against the measurement of the current gain.
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2002. Vol. 389-393, no 2, 1337-1340 p.
Bipolar Transistors, Breakdown Voltage, Thermal Conductivity, Bipolar junction transistors, Electric breakdown, Electric currents, Gain measurement, Silicon carbide
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-85429OAI: oai:DiVA.org:kth-85429DiVA: diva2:499967
References: Chow, T.P., (2000) 1st International Workshop on Ultra-Low-Loss Power Device Technology, p. 117; Luo, Y., Fursin, L., Zhao, J.H., (2000) Electron. Lett., 36, p. 1496; Ryu, S.-H., Agarwal, A.K., Singh, R., Palmour, J.W., (2001) IEEE Elec. Dev. Lett., 22, p. 124; Huang, A.Q., Zhang, B., (2000) Solid-State Electron., 44, p. 325; Lee, S.-K., Zetterling, C.-M., Ãstling, M., (2000) Mat. Res. Soc. Symp. Proc., 640; Bakowski, M., Gustavsson, U., Lindefelt, U., (1997) Phys. stat. sol. (a), 162, p. 421; Konstantinov, A.O., (1997) Appl. Phys. Lett., 71, p. 90; Danielsson, E., Breitholtz, B., Zetterling, C.-M., Ãstling, M., (1999) Physica Scripta, T79, p. 290; Sze, S.M., (1981) Physics of Semiconductor Devices, , John Wiley & Sons, New York; Zimmermann, U., HallÃ©n, A., Breitholtz, B., (2000) Mat. Sci. Forum, 338-342, p. 1323; Anikin, M.M., (1989) Sov. Phys. Semicond., 23, p. 1122; Bergman, J.P., Kordina, O., Janzen, E., (1997) Phys. stat. sol. (a), 162, p. 65; Marsh, S.P., (2000) IEEE Trans. Electron Devices, 47, p. 288; Burgemeister, E.A., Muench, W.V., Pettenpaul, E., (1979) Jpn. J. Appl. Phys., 50, p. 5790 NR 201408052012-02-132012-02-132012-02-13Bibliographically approved