Reduction of the barrier height and enhancement of tunneling current of titanium contacts using embedded Au nano-particles on 4H and 6H silicon carbide
2002 (English)In: Materials Science Forum, ISSN 0255-5476, Vol. 389-393, no 2, 937-940 p.Article in journal (Refereed) Published
We have investigated the electrical characteristics of Ti Schottky contacts with embedded Au nano-particles on various types of epilayers of SiC (4H- and 6H-SiC). From our current-voltage (I-V) and capacitance-voltage (C-V) measurements, we observed that Ti Schottky contacts with embedded Au nano-particles had 0.19 eV (n-4H-SiC) and 0.15 eV (n-6H-SiC) lower barrier height than those of particle free Ti Schottky contacts. In order to understand this reduction of the Schottky barrier height (SBH) for Ti Schottky contacts with embedded Au nano-particles, it has been proposed that SBH lowering is caused by an enhanced electric field due to the small size of the Au nano-particles and the large SBH difference. We have also tested these contacts on highly doped n-and p-type SiC material to study ohmic contacts using linear TLM measurements.
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2002. Vol. 389-393, no 2, 937-940 p.
Aerosol, Image Force Lowering, Nanoparticles, Ohmic Contacts, Schottky Contacts, SiC, Aerosols, Capacitance, Current voltage characteristics, Electric fields, Gold, Nanostructured materials, Semiconductor doping, Silicon carbide, Titanium, Semiconductor materials
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-85428OAI: oai:DiVA.org:kth-85428DiVA: diva2:499970
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