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Reduction of the barrier height and enhancement of tunneling current of titanium contacts using embedded Au nano-particles on 4H and 6H silicon carbide
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0001-8108-2631
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-5845-3032
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2002 (English)In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 389-393, no 2, 937-940 p.Article in journal (Refereed) Published
Abstract [en]

We have investigated the electrical characteristics of Ti Schottky contacts with embedded Au nano-particles on various types of epilayers of SiC (4H- and 6H-SiC). From our current-voltage (I-V) and capacitance-voltage (C-V) measurements, we observed that Ti Schottky contacts with embedded Au nano-particles had 0.19 eV (n-4H-SiC) and 0.15 eV (n-6H-SiC) lower barrier height than those of particle free Ti Schottky contacts. In order to understand this reduction of the Schottky barrier height (SBH) for Ti Schottky contacts with embedded Au nano-particles, it has been proposed that SBH lowering is caused by an enhanced electric field due to the small size of the Au nano-particles and the large SBH difference. We have also tested these contacts on highly doped n-and p-type SiC material to study ohmic contacts using linear TLM measurements.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2002. Vol. 389-393, no 2, 937-940 p.
Keyword [en]
Aerosol, Image Force Lowering, Nanoparticles, Ohmic Contacts, Schottky Contacts, SiC, Aerosols, Capacitance, Current voltage characteristics, Electric fields, Gold, Nanostructured materials, Semiconductor doping, Silicon carbide, Titanium, Semiconductor materials
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-85428OAI: oai:DiVA.org:kth-85428DiVA: diva2:499970
Note
References: Geib, K.M., Wilson, C., Long, R.G., Wilmsen, C.W., (1990) J. Appl. Phys., 68, p. 2796; Anand, S., Carlsson, S.-B., Deppert, K., Montelius, L., Samuelson, L., (1996) J. Vac. Sci. Technol. B, 14, p. 2794; Magnusson, M.H., Deppert, K., Malm, J.-O., Bovin, J.-O., Samuelson, L., (1999) J. Nanoparticle Res., 1, p. 243; Lee, S.-K., Zetterling, C.-M., Östling, M., (2001) J. Elect. Mater., 30, p. 242; Tung, R.T., (1992) Phys. Rev. B, 45, p. 13509; SILVACO intemation Ltd. CA, U.S.ANarayanan, V., Liu, Z., Shen, Y.M.N., Kim, M.S., Kan, E.C., (2000) Proc. IEDM, 87 NR 20140805Available from: 2012-02-13 Created: 2012-02-13 Last updated: 2017-12-07Bibliographically approved

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Zetterling, Carl-Mikael

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