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Simulation and Measurement of Switching Characteristics of 4H-SiC Buried-Gate JFETs
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0001-8108-2631
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-5845-3032
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2003 (English)In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 433-436, 773-776 p.Article in journal (Refereed) Published
Abstract [en]

Buried-gate junction field-effect transistors (JFETs) have been fabricated in 4H polytype silicon carbide (SiC). The dynamic switching characteristics of the JFETs in a circuit with inductive load have been characterized. The drain voltage rise/fall time of ∌30 ns and 25 ns have been observed for turn-off and turn-on, respectively. The results have been compared to numerical mixed-mode circuit simulations with finite element structures.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2003. Vol. 433-436, 773-776 p.
Keyword [en]
Junction Field Effect Transistors, Simulation, Switching, Inductive loads, Electric potential, Hydrogen, Semiconductor materials, Silicon carbide, Junction gate field effect transistors
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-85432OAI: oai:DiVA.org:kth-85432DiVA: diva2:499982
Note
References: Li, Y., Cooper, J.A., Capano, M.A., (2002) Materials Science Forum, 389-393, pp. 1191-1194; Zolper, J.C., (1998) Solid-State Electronics, 42, pp. 2153-2156; Friedrichs, P., (2002) Materials Science Forum, 389-393, pp. 1053-1056; http://www.cree.com, Durham, NC, USAKoo, S.-M., Lee, S.-K., Zetterling, C.-M., Ostling, M., Forsberg, U., Janzén, E., (2002) Materials Science Forum, 389-393, pp. 1235-1238; Zimmermann, U., Hallen, A., Brietholtz, B., (2000) Materials Science Forum, 338-342, pp. 1323-1326; (1997) Medici User's Manual, , Vol 2.3, TMA Inc NR 20140805Available from: 2012-02-13 Created: 2012-02-13 Last updated: 2017-12-07Bibliographically approved

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Zetterling, Carl-Mikael

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