Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Electro-Thermal Simulations and Measurement of Silicon Carbide Bipolar Transistors
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0001-8108-2631
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-5845-3032
2003 (English)In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 433-436, 781-784 p.Article in journal (Refereed) Published
Abstract [en]

Silicon carbide bipolar junction transistors were fabricated in the study reported here. Three-dimensional thermal simulations were conducted for the SiC BJTs using FEMLAB. Thermal images of a device under operation were also recorded using an infrared camera. Both the simulations and the measurement show a significant temperature increase in the vicinity of the device when operated at high power densities, thus causing the decrease in the DC current gain. The junction temperature extracted during self-heating was approximately 154 °C at a power dissipation of 5.5 W, using the assumption that the current gain only depends on the temperature. The simulation results show a junction temperature of 157 °C at the same power level. Long-term stability tests over 80 hours were also performed at elevated temperatures, and a 10% decrease in the current gain was observed.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2003. Vol. 433-436, 781-784 p.
Keyword [en]
Bipolar Transistor, Electro-Thermal Simulation, Junction Temperature, Electro-thermal simulations, Electric current carrying capacity (cables), Gain measurement, Infrared imaging, Silicon carbide, Bipolar transistors
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-85431OAI: oai:DiVA.org:kth-85431DiVA: diva2:499986
Note
References: Chow, T.P., (2000) 1st International Workshop on Ultra-Low-Loss Power Device Technology, pp. 117-124; Luo, Y., Fursin, L., Zhao, J.H., (2000) Electron. Lett., 36, pp. 1496-1497; Marsh, S.P., (2000) IEEE Trans. Electron Devices, 47, pp. 288-291; Burgemeister, E.A., Muench, W.V., Pettenpaul, E., (1979) Jpn. J. Appl. Phys., 50, pp. 5790-5794 NR 20140805Available from: 2012-02-13 Created: 2012-02-13 Last updated: 2017-12-07Bibliographically approved

Open Access in DiVA

No full text

Other links

http://www.scopus.com/inward/record.url?eid=2-s2.0-14844283299&partnerID=40&md5=04a08307902465f10928a9780fddf903

Authority records BETA

Zetterling, Carl-Mikael

Search in DiVA

By author/editor
Zetterling, Carl-MikaelÖstling, Mikael
By organisation
Integrated Devices and Circuits
In the same journal
Materials Science Forum
Other Electrical Engineering, Electronic Engineering, Information Engineering

Search outside of DiVA

GoogleGoogle Scholar

urn-nbn

Altmetric score

urn-nbn
Total: 23 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf