Electro-Thermal Simulations and Measurement of Silicon Carbide Bipolar Transistors
2003 (English)In: Materials Science Forum, ISSN 0255-5476, Vol. 433-436, 781-784 p.Article in journal (Refereed) Published
Silicon carbide bipolar junction transistors were fabricated in the study reported here. Three-dimensional thermal simulations were conducted for the SiC BJTs using FEMLAB. Thermal images of a device under operation were also recorded using an infrared camera. Both the simulations and the measurement show a significant temperature increase in the vicinity of the device when operated at high power densities, thus causing the decrease in the DC current gain. The junction temperature extracted during self-heating was approximately 154 Â°C at a power dissipation of 5.5 W, using the assumption that the current gain only depends on the temperature. The simulation results show a junction temperature of 157 Â°C at the same power level. Long-term stability tests over 80 hours were also performed at elevated temperatures, and a 10% decrease in the current gain was observed.
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2003. Vol. 433-436, 781-784 p.
Bipolar Transistor, Electro-Thermal Simulation, Junction Temperature, Electro-thermal simulations, Electric current carrying capacity (cables), Gain measurement, Infrared imaging, Silicon carbide, Bipolar transistors
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-85431OAI: oai:DiVA.org:kth-85431DiVA: diva2:499986
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