Change search
ReferencesLink to record
Permanent link

Direct link
Challenges for High Temperature Silicon Carbide Electronics
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0001-8108-2631
Show others and affiliations
2003 (English)In: Materials Research Society Symposium - Proceedings, San Francisco, CA, 2003, Vol. 764, 15-25 p.Conference paper (Refereed)
Abstract [en]

Silicon carbide has been proposed as an excellent material for high-frequency, high-power and high-temperature electronics. High power and high frequency applications have been pursued for quite some time in SiC with a great deal of success in terms of demonstrated devices. However, self-heating problems due to the much higher power densities that result when ten times higher electrical fields are used inside the devices needs to be addressed. High-temperature electronics has not yet experienced as much attention and success, possibly because there is no immediate market. This paper will review some of the advances that have been made in high-temperature electronics using silicon carbide, starting from process technology, continuing with device design, and finishing with circuit examples. For process technology, one of the biggest obstacles is long-term stable contacts. Several device structures have been electrically characterized at high temperature (BJTs and FETs) and will be compared to surface temperature measurements and physical device simulation. Finally some proposed circuit topologies as well as novel solutions will be presented.

Place, publisher, year, edition, pages
San Francisco, CA, 2003. Vol. 764, 15-25 p.
, MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS: New Applications for Wide-Bandgap Semiconductors
Keyword [en]
Computer simulation, Energy gap, High temperature effects, Integrated circuit layout, Interfaces (materials), Ohmic contacts, Semiconductor doping, Silicon carbide, Thermodynamic stability, Thermooxidation, Mobile charges, Power density, Semiconductor device manufacture
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
URN: urn:nbn:se:kth:diva-85434OAI: diva2:499993
MRS 2003
References: Zetterling, C.-M., (2002) Process Technologies for Silicon Carbide Devices (EMIS Processing Series, INSPEC, IEE, , London, UK; Neudeck, P.G., Okojie, R.S., Chen, L.-Y., (2002) Proceedings of the IEEE, 90, pp. 1065-1076; Singh, R., Irvine, K.G., Richmond, J.T., Palmour, J.W., (2002) Materials Science Forum, 389-393, pp. 1265-1268; Tang, Y., Fedison, J.B., Chow, T.P., (2000) Proc. IEEE/Cornell Conference on High Performance Devices, Piscataway, NJ, USA, p. 178; Zolper, J.C., (1998) Solid-State Electron., 42, p. 2153; Maranowski, M.M., Cooper, J.A., (1999) IEEE Trans. Electron Devices, 46, p. 520; Wang, X., Ma, T.P., (1999) Technical Digest of International Electron Device Meeting, , Washington DC., Dec. 5-8; Lipkin, L.A., Palmour, J.W., (2000) Mater. Sci. Forum, 338-342, p. 1093; Liu, S., Porrs, G., Scofield, J., (2000) Mater. Sci. Forum, 338-342, p. 1021; Okojie, R.S., Lucko, D., Spry, D., (2001) Proc. Electronic Materials Conf., p. 6. , Notre Dame, IN, June; Lee, S.K., Danielsson, E., Zetterling, C.M., Östling, M., Palmquist, J.P., Hogberg, H., Jansson, U., (2000) Mat. Res. Soc. Proc., 622, pp. T691; Östling, M., Koo, S.-M., Lee, S.-K., Danielsson, E., Domeij, M., Zetterling, C.-M., (2002) Proc. 23rd International Conference on Microelectronics, 1, p. 31; Lee, S.-K., Uneus, L., Koo, S.-M., Zetterling, C.-M., Ekedahl, L.-G., Lundström, I., Lloyd Spetz, A., Östling, M., (2002) TMS Electronic Materials Conference (EMC), , Santa Barbara, USA; Lloyd Spetz, A., Tobias, P., Baranzahi, A., Mårtensson, P., Lundström, I., (1999) IEEE Trans. Electron Devices, 46, p. 561; Marsh, S.P., (2000) IEEE Trans. Electron Devices, 47, p. 288; Liu, W., Danielsson, E., Zetterling, C.-M., Östling, M., Mater. Sci. Forum.; http://www.femlab.comKoo, S.-M., Lee, S.-K., Zetterling, C.-M., Östling, M., Forsberg, U., Janzen, E., (2002) Mater. Sci. Forum, 389-393, p. 1235; Scozzie, C.J., McLean, F.B., McGarrity, J.M., (1997) J. Appl. Phys., 81, p. 7687; Koo, S.-M., Domeij, M., Zetterling, C.-M., Östling, M., (2002) Proceedings of Nordic Workshop on Power and Industrial Electronics, , Stockholm, Sweden; Koo, S.-M., Zetterling, C.-M., Lee, H.-S., Östling, M., IEE Electronics Letters; Koo, S.-M., Khartsev, S.I., Zetterling, C.-M., Grishin, A.M., Östling, M., (2002) Appl. Phys. Lett., 81, p. 895; Koo, S.-M., Khartsev, S.I., Zetterling, C.-M., Grishin, A.M., Östling, M., in manuscriptKoo, S.-M., Khartsev, S.I., Zetterling, C.-M., Grishin, A.M., Östling, M., Mater. Res. Soc. Symp. Proc. NR 20140805Available from: 2012-02-13 Created: 2012-02-13 Last updated: 2012-02-13Bibliographically approved

Open Access in DiVA

No full text

Other links

Search in DiVA

By author/editor
Zetterling, Carl-MikaelDomeij, MartinÖstling, Mikael
By organisation
Integrated Devices and Circuits
Other Electrical Engineering, Electronic Engineering, Information Engineering

Search outside of DiVA

GoogleGoogle Scholar
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Total: 43 hits
ReferencesLink to record
Permanent link

Direct link