Formation and high frequency CV-measurements of aluminum/aluminum nitride/6H silicon carbide structures
1996 (English)In: Materials Research Society Symposium - Proceedings, San Francisco, CA, USA, 1996, Vol. 423, no Pittsburgh, PA, United States, 667-672 p.Conference paper (Refereed)
Undoped single crystalline aluminum nitride films were grown by metal organic chemical vapor deposition (MOCVD) at 1200 Â°C. The precursors used were trimethylaluminum (TMA) and ammonia (NH3) in a hydrogen carrier flow, at a pressure of 10 Torr. Silicon carbide substrates of the 4H or the 6H polytype with an epilayer on the silicon face, were used to grow the 200 nm thick AlN films. Aluminum was evaporated and subsequently patterned to form MIS capacitors for high frequency (400 kHz) capacitance voltage measurements at room temperature. It was possible to measure the structure and characterize accumulation, depletion and deep depletion. However, it was not possible to invert the low doped SiC epilayer at room temperature. From an independent optical thickness measurement the relative dielectric constant of aluminum nitride was calculated to be 8.4. The films were stressed up to 50 Volts (2.5 MV/cm) without breakdown or excessive leakage currents. These results indicate the possibility to replace silicon dioxide with aluminum nitride in SiC field effect transistors.
Place, publisher, year, edition, pages
San Francisco, CA, USA, 1996. Vol. 423, no Pittsburgh, PA, United States, 667-672 p.
, Proceedings of the 1996 MRS Spring Symposium
Capacitance measurement, Film growth, Interfaces (materials), Metallorganic chemical vapor deposition, MOSFET devices, Nitrides, Permittivity, Semiconducting aluminum compounds, Silicon carbide, Single crystals, Substrates, Voltage measurement, Aluminum nitride, High frequency capacitance voltage measurements, Semiconducting films
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-85402OAI: oai:DiVA.org:kth-85402DiVA: diva2:499995
Sponsors: MRS NR 201408052012-02-132012-02-132012-02-13Bibliographically approved