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High voltage silicon carbide Junction Barrier Schottky rectifiers
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0001-8108-2631
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-5845-3032
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1997 (English)In: Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Ithaca, NY, USA, 1997, no Piscataway, NJ, United States, 256-263 p.Conference paper, Published paper (Refereed)
Abstract [en]

The Junction Barrier Schottky (JBS) diode has the advantage of a low forward voltage drop comparable to that of Schottky diodes, as well as a high blocking voltage and low reverse leakage current of a pn diode. This device, originally demonstrated in silicon technology, is especially attractive for wide bandgap materials such as silicon carbide (SiC) in which pn diodes have a large forward voltage drop. Two different JBS designs in 6H SiC have been fabricated, and the electrical characteristics have been compared to Schottky and pn diodes on the same wafer. Although the ion implanted pn diodes had remaining implant damage, the JBS diodes worked well. The JBS diodes were capable of blocking up to 1100 V with a leakage current density of 0.15 A/cm2, limited by the leakage when the drift region was fully depleted, or breakdown of the SiC material itself. The forward conduction was limited by an on-resistance of 20 mΩcm2.

Place, publisher, year, edition, pages
Ithaca, NY, USA, 1997. no Piscataway, NJ, United States, 256-263 p.
Series
Proceedings of the 1997 IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits
Keyword [en]
Electric breakdown of solids, Ion implantation, Leakage currents, Schottky barrier diodes, Semiconducting silicon compounds, Semiconductor junctions, Silicon carbide, Junction barrier Schottky rectifiers, Solid state rectifiers
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-85405OAI: oai:DiVA.org:kth-85405DiVA: diva2:499999
Conference
Cornell 1998
Note
Sponsors: IEEE NR 20140805Available from: 2012-02-13 Created: 2012-02-13 Last updated: 2012-02-13Bibliographically approved

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Zetterling, Carl-Mikael

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