Growth of SiC thin films on (100) and (111) silicon by pulsed laser deposition combined with a vacuum annealing process
1999 (English)In: Materials Research Society Symposium - Proceedings, San Francisco, CA, USA, 1999, Vol. 572, no Warrendale, PA, United States, 207-212 p.Conference paper (Refereed)
Crystalline 3C-SiC thin films were successfully grown on (100) and (111) Si substrates by using ArF pulsed laser ablation from a SiC ceramic target combined with a vacuum annealing process. X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FTIR) were employed to study the effect of annealing on the structure of thin films deposited at 800Â°C. It was demonstrated that vacuum annealing could transform the amorphous SiC films into crystalline phase and that the crystallinity was strongly dependent on the annealing temperature. For the samples deposited on (100) and (111) Si, the optimum annealing temperatures were 980 and 920Â°C, respectively. Scanning electron microscope (SEM) micrographs exhibited different characteristic microstructure for the (100) and (111) Si cases, similar to that observed for the carbonization layer initially formed in chemical vapor deposition of SiC films on Si. This also showed the presence of the epitaxial relationship of 3C-SiC//Si and 3C-SiC//Si in the direction of growth.
Place, publisher, year, edition, pages
San Francisco, CA, USA, 1999. Vol. 572, no Warrendale, PA, United States, 207-212 p.
, Proceedings of the 1999 MRS Spring Meeting - Symposium on 'Wide-Bandgap Semiconductors for High-Power, High Frequency and High-Temperature Applications'
Annealing, Crystal growth, Crystal microstructure, Fourier transform infrared spectroscopy, Laser ablation, Pulsed laser applications, Semiconducting silicon, Semiconducting silicon compounds, Silicon carbide, Temperature, Vacuum applications, X ray diffraction analysis, Annealing temperature, Carbonization layer, Crystalline phase, Pulsed laser deposition, Vacuum annealing process, Thin films
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-85418OAI: oai:DiVA.org:kth-85418DiVA: diva2:500001
Sponsors: Air Force Research Laboratories; Army Research Office; DARPA; ODDR and E(R) NR 201408052012-02-132012-02-132012-02-13Bibliographically approved