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ICP etching of SiC
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-5845-3032
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1997 (English)In: Materials Research Society Symposium - Proceedings, Boston, MA, USA, 1997, Vol. 483, no Warrendale, PA, United States, 177-183 p.Conference paper, Published paper (Refereed)
Abstract [en]

A number of different plasma chemistries, including NF3/O2, SF6/O2, SF6/Ar, ICl, IBr, Cl2/Ar, BCl3/Ar and CH4/H2/Ar, have been investigated for dry etching of 6H and 3C-SiC in a Inductively Coupled Plasma tool. Rates above 2,000 angstroms·cm-1 are found with fluorine-based chemistries at high ion currents. Surprisingly, Cl2-based etching does not provide high rates, even though the potential etch products (SiCl4 and CCl4) are volatile. Photoresist masks have poor selectivity over SiC in F2-based plasmas under normal conditions, and ITO or Ni are preferred.

Place, publisher, year, edition, pages
Boston, MA, USA, 1997. Vol. 483, no Warrendale, PA, United States, 177-183 p.
Series
Proceedings of the 1997 Fall MRS Symposium
Keyword [en]
Fluorine compounds, Masks, Photoresists, Plasma etching, Semiconducting silicon compounds, Volatile organic compounds, Inductively coupled plasma, Silicon carbide
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-85406OAI: oai:DiVA.org:kth-85406DiVA: diva2:500002
Conference
MRS 1997
Note
Sponsors: MRS NR 20140805Available from: 2012-02-13 Created: 2012-02-13 Last updated: 2012-02-13Bibliographically approved

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Zetterling, Carl-Mikael

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