ICP etching of SiC
1997 (English)In: Materials Research Society Symposium - Proceedings, Boston, MA, USA, 1997, Vol. 483, no Warrendale, PA, United States, 177-183 p.Conference paper (Refereed)
A number of different plasma chemistries, including NF3/O2, SF6/O2, SF6/Ar, ICl, IBr, Cl2/Ar, BCl3/Ar and CH4/H2/Ar, have been investigated for dry etching of 6H and 3C-SiC in a Inductively Coupled Plasma tool. Rates above 2,000 angstromsÂ·cm-1 are found with fluorine-based chemistries at high ion currents. Surprisingly, Cl2-based etching does not provide high rates, even though the potential etch products (SiCl4 and CCl4) are volatile. Photoresist masks have poor selectivity over SiC in F2-based plasmas under normal conditions, and ITO or Ni are preferred.
Place, publisher, year, edition, pages
Boston, MA, USA, 1997. Vol. 483, no Warrendale, PA, United States, 177-183 p.
, Proceedings of the 1997 Fall MRS Symposium
Fluorine compounds, Masks, Photoresists, Plasma etching, Semiconducting silicon compounds, Volatile organic compounds, Inductively coupled plasma, Silicon carbide
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-85406OAI: oai:DiVA.org:kth-85406DiVA: diva2:500002
Sponsors: MRS NR 201408052012-02-132012-02-132012-02-13Bibliographically approved