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The formation and characterization of epitaxial titanium carbide contacts to 4H-SiC
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0001-8108-2631
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
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2000 (English)In: Materials Research Society Symposium - Proceedings, San Francisco, CA, 2000, Vol. 622, T691-T696 p.Conference paper (Refereed)
Abstract [en]

Epitaxial TiC Ohmic and Schottky contacts to 4H-SiC were formed by a new deposition method, UHV co-evaporation with Ti and C60, at low temperature (< 500°C). We achieved a contact resistivity of 2 × 10-5 Ωcm2 at 25°C for as deposited Ohmic contacts on Al ion implanted 4H-Silicon carbide. The rectifying behavior of TiC Schottky contacts was also investigated using I-V and C-V. The measured Schottky barrier height (SBH) was 1.26 eV for n-type and 1.65 eV for p-type 4H-SiC using C-V measurements for frequencies ranging from 1kHz to 1MHz. LEED, RBS, XPS, and XRD measurements were performed to analyze composition ratio, interface reaction, and structural properties of the TiC epitaxial layer.

Place, publisher, year, edition, pages
San Francisco, CA, 2000. Vol. 622, T691-T696 p.
, Wide-Bandgap Electronic Devices
Keyword [en]
Annealing, Current voltage characteristics, Electric conductivity, Epitaxial growth, Interfaces (materials), Ion implantation, Ohmic contacts, Schottky barrier diodes, Thermal effects, Titanium carbide, Schottky barrier heights (SBH), Silicon carbide
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
URN: urn:nbn:se:kth:diva-85423OAI: diva2:500005
MRS 2000
References: Neudeck, P.G., (1995) J. Electron. Mater., 24, p. 283; Porter, L.M., Davis, R.F., (1995) Mater. Sci. Eng., B34, p. 83; Crofton, J., Porter, L.M., Williams, J.R., (1997) Phys. stat. sol. (b), 202, p. 581; Rhoderick, E.H., Williams, R.H., (1988) Metal-Semiconductor Contacts, 2nd ed., , Oxford: Clarendon Press; Kimoto, T., Itoh, A., Matsunami, H., Nakata, T., Watanabe, M., (1996) J. Electron. Mater., 25, p. 879; Cree Research Inc., Durham, N.C, USALee, S.-K., Zetterling, C.-M., Östling, M., Palmquist, J.-P., Högberg, H., Jansson, U., (2000) Solid-State Electronics, 44, p. 1179; Curl, R.F., (1992) Carbon, 30, p. 1149; Kimoto, T., Wahab, Q., Ellison, A., Forsberg, U., Tuominen, M., Yakimova, R., Henry, A., Janzen, E., (1998) Materials Science Forum, 264-268, p. 921; Ziegler, J.F., TRIM 97 ed., , Yorktown, NY, USA; Lee, S.-K., Zetterling, C.-M., Östling, M., (2000) J. Appl. Phys., 87, p. 8039; Lundberg, N., Östling, M., (1996) Solid-State Electronics, 39, p. 1559; Ruff, M., Mitlehner, H., Helbig, R., (1994) IEEE Trans. Electron Dev., 41, p. 1040; Zhao, J.H., Tone, K., Weiner, S.R., Caleca, M.A., Du, H., Withrow, S.P., (1997) IEEE Electron Device Lett., 18, p. 375 NR 20140805Available from: 2012-02-13 Created: 2012-02-13 Last updated: 2012-02-13Bibliographically approved

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