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Titanium tungsten (TiW) for Ohmic contacts to n-and p-type 4H-SiC
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0001-8108-2631
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-5845-3032
2001 (English)In: Materials Research Society Symposium - Proceedings, Boston, MA, 2001, Vol. 640, H7.2.1-H7.2.6 p.Conference paper, Published paper (Refereed)
Abstract [en]

In the present work, we investigated sputtered titanium tungsten (TiW) contacts for Ohmic contacts to both n- and p-type 4H-SiC with long-term stability under high temperature (500°C). Epitaxial layers with a doping concentration of 1.3×1019 and 6×1018 cm-3 were used. After high temperature annealing (>950°C) sputtered TiW contacts showed Ohmic behavior with good uniform distribution of the specific contact resistance. We obtained an average specific contact resistance (ρc) of 4×10-5 Ωcm2 and 1.2-1.7×10-4 Ωcm2 for p- and n-type, respectively from linear TLM measurement. We also found some variation of the specific contact resistance and the sheet resistance from our TLM measurement for p-type contacts. We will discuss this behavior with the measurement of SIMS. Long-term stability with a top-cap layer is also discussed.

Place, publisher, year, edition, pages
Boston, MA, 2001. Vol. 640, H7.2.1-H7.2.6 p.
Series
Silicon Carbide- Materials, Processing and Devices
Keyword [en]
Annealing, High temperature effects, Ohmic contacts, Semiconductor doping, Silicon carbide, Doping concentration, Epitaxial layers, Specific contact resistance, Titanium tungsten, Titanium alloys
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-85425OAI: oai:DiVA.org:kth-85425DiVA: diva2:500008
Conference
MRS 2001
Note
References: Trew, R.J., (1997) Phys. Status. Solidi., 162 A, p. 409; Porter, L.M., Davis, R.F., (1995) Mater. Sci. Eng., 34 B, p. 83; Crofton, J., Porter, L.M., Williams, J.R., (1997) Phys. Status. Solidi., 202 B, p. 581; Rhoderick, E.H., Williams, R.H., (1988) Metal-Semiconductor Contacts, 2nd Ed., , (Clarendon Press, Oxford); Crofton, J., McMullin, P.G., Williams, J.R., Bozack, M.J., (1995) J. Appl. Phys., 77, p. 1317; Hallin, C., Yakimova, R., Pecz, B., Georgieva, A., Marinova, Ts., Kasamakova, L., Kakanakov, R., Janzen, E., (1997) J. Electron. Mater., 26, p. 119; Cole, M.W., Joshi, P.C., Hubbard, C.W., Wood, M.C., Ervin, M.H., Geil, B., Ren, F., (2000) J. Appl. Phys., 88, p. 2652; Crofton, J., Williams, J.R., Bozack, M.J., Barnes, P.A., (1994) Inst. Phys. Conf. Ser., 137, p. 719; Lee, S.-K., Zetterling, C.-M., Östling, M., (2000) J. Appl. Phys., 87, p. 8039; CREE Research Inc. Durham, N.C., U.S.AUR - http://www.scopus.com/inward/record.url?eid=2-s2.0-17044450735&partnerID=40&md5=2197a386928ddc7d920499f63108fba7 NR 20140805Available from: 2012-02-13 Created: 2012-02-13 Last updated: 2012-02-13Bibliographically approved

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Zetterling, Carl-Mikael

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