Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Comparison of F2 plasma chemistries for deep etching of SiC
Show others and affiliations
2001 (English)In: Materials Research Society Symposium - Proceedings, Boston, MA, 2001, Vol. 640, H7.7.1-H7.7.6 p.Conference paper, Published paper (Refereed)
Abstract [en]

A number of F2-based plasma chemistries (NF3, SF6, PF5 and BF3) were investigated for high rate etching of SiC. The most advantageous of these is SF6, based on the high rate (0.6 Όm·min-) it achieves and its relatively low cost compared to NF3. The changes in electrical properties of the near-surface region are relatively minor when the incident ion energy is kept below approximately 75 eV. At a process pressure of 5 m Torr, the SiC etch rate falls-off by ∌15% in 30 Όm diameter via holes compared to larger diameter holes (> 60 Όm diameter) or open areas on the mask.

Place, publisher, year, edition, pages
Boston, MA, 2001. Vol. 640, H7.7.1-H7.7.6 p.
Series
Silicon Carbide- Materials, Processing and Devices
Keyword [en]
Electric properties, Fluorine compounds, Inductively coupled plasma, Ions, Plasma etching, Pressure effects, Diameter holes, Ion energy, Plasma chemistry, Silicon carbide
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-85424OAI: oai:DiVA.org:kth-85424DiVA: diva2:500010
Conference
MRS 2001
Note
References: (1995) Properties of SiC, pp. 131-149. , ed. G.L. Harris (Inspec, London, UK); (1997) SiC: A Review of Fundamental Questions and Applications to Current Device Technology, , ed. W.J. Choyke, H. Matsunami and G. Pensl (Springer-Verlag, Berlin); Shul, R.J., Willison, C.G., Sullivan, C.T., Kravitz, S.H., Zhang, L., Zipperian, T.E., (1998) Proc. Electrochem. Soc., 98 (2), p. 564; Lanois, F., Planson, D., Locatelli, M.L., Lassagne, P., Jaussaud, C., Chante, J.P., (1999) J. Electron. Mater., 28, p. 219; Yih, P.H., Steckl, A.J., (1993) J. Electrochem. Soc., 140, p. 1813; Luther, B.P., Ruzyllo, J., Miller, D.L., (1990) Appl. Phys. Lett., 63, p. 171; Wu, J., Parsons, J.D., Evans, D.R., (1995) J. Electrochem. Soc., 142, p. 669; Lanois, F., Lassagne, P., Planson, D., Locatelli, M.L., (1996) Appl. Phys. Lett., 69, p. 236; Donmae, S., Shibahara, K., Nishino, S., Matsunami, H., (1985) Jap. J. Appl. Phys., 24, pp. L873; Kelner, G., Binari, S.C., Klein, P.H., (1987) J. Electrochem. Soc., 134, p. 253; Casady, J., Luckowski, E.D., Bozack, M., Sheridan, B., Johnson, R.W., Williams, J.R., (1996) J. Electrochem. Soc., 143, p. 1750; Palmer, J.W., Davis, R.F., Wallett, T.M., Bhasin, K.B., (1986) J. Vac. Sci. Technol., 4 A, p. 590; Steckl, A.J., Yih, P.H., (1992) Appl. Phys. Lett., 60, p. 1966; Flemish, J.R., Xie, K., Zhao, J., (1994) Appl. Phys. Lett., 64, p. 2315; Cao, L., Li, B., Zhao, J.H., (1998) Proceeding of the International Conference on SiC and III-Nitrides, 1998, , (IOP, Bristol, UK); Flemish, J.R., Xie, K., (1996) J. Electrochem. Soc., 143, p. 2620; Wang, J.J., Lambers, E.S., Pearton, S.J., Östling, M., Zetterling, C.-M., Grow, J.M., Ren, F., (1998) Solid-State Electron., 42, p. 743; McDaniel, G.F., Lee, J.W., Lambers, E.S., Pearton, S.J., Holloway, P.H., Ren, F., Grow, J.M., Wilson, R.C., (1997) J. Vac. Sci. Technol., 14 A, p. 885; Wang, J.J., Lambers, E.S., Pearton, S.J., Ostling, M., Zetterling, C.-M., Grow, J.M., Ren, F., Shul, R.J., (1998) J. Vac. Sci, Technol., 16 A, p. 2204; Hong, J., Shul, R.J., Zhang, L., Lester, L.F., Cho, H., Hahn, Y.B., Hays, D.C., Ostling, M., (1999) J. Electron. Mater., 28, p. 196; Xie, K., Flemish, J.R., Zhao, J.H., Buchwald, W.R., Casas, L., (1995) Appl. Phys. Lett., 67, p. 368; Leerungnawarat, P., Hays, D.C., Cho, H., Pearton, S.J., Strong, R.M., Zetterling, C.-M., Östling, M., (1999) J. Vac. Sci. Technol., 17 B, p. 2050; Khan, F.A., Adesida, I., (1999) Appl. Phys. Lett., 75, p. 2268; Cho, H., Leerungnawarat, P., Hays, D.C., Pearton, S.J., Chu, S.N.G., String, R.M., Zetterling, C.-M., Ren, F., (2000) Appl. Phys. Lett., 76, p. 739; Chabert, P., Proust, N., Perrin, J., Boswell, R.W., (2000) Appl. Phys. Lett., 76, p. 2310; Yih, P.H., Steckl, A.J., (1996) J. Electrochem. Soc., 142, p. 312; Muetterties, E.L., (1967) The Chemistry of Boron and Its Compounds, , (Wiley, New York); Cornbridge, D.E.C., (1978) Phosphorous: An Outline of Its Chemistry, Biochemistry and Technology, , (Elsevier, New York); Emelius, H.J., (1969) The Chemistry of Fluorine and Its Compounds, , (Academic, New York); Stacey, M., Tatlow, J.C., Sharpe, A.G., (1961) Advances in Fluorine Chemistry, 3. , (Butterworths, Washington, DC) NR 20140805Available from: 2012-02-13 Created: 2012-02-13 Last updated: 2012-02-13Bibliographically approved

Open Access in DiVA

No full text

Other links

http://www.scopus.com/inward/record.url?eid=2-s2.0-0034874372&partnerID=40&md5=b77f0e6e646a0a06c52a85cf825de551

Authority records BETA

Zetterling, Carl-Mikael

Search in DiVA

By author/editor
Zetterling, Carl-Mikael
By organisation
Integrated Devices and Circuits
Other Electrical Engineering, Electronic Engineering, Information Engineering

Search outside of DiVA

GoogleGoogle Scholar

urn-nbn

Altmetric score

urn-nbn
Total: 101 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf