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Towards ferroelectric field effect transistors in 4H-silicon carbide
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0001-8108-2631
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2002 (English)In: Materials Research Society Symposium - Proceedings, Boston, MA, 2002, Vol. 742, 371-379 p.Conference paper (Refereed)
Abstract [en]

We report on the integration of ferroelectric Pb(Zr,Ti)O3 (PZT) thin films on 4H-silicon carbide and their electrical properties. The structures of metal-ferroelectric-(insulator)-semiconductor MF(I)S and metal-ferroelectric-metal-insulator-semiconductor MFMIS have been fabricated and characterized. The MFMIS structures of Au/PZT/Pt/Ti/SiO2/SiC have shown fully saturated P-E hysteresis loops with remnant polarization Pr = 14.2 ΌC/cm2 and coercive field Ec = 58.9 kV/cm. The MFIS structures exhibited stable capacitance-voltage C-V loops with low conductance (<0.1 mS/cm2, tan Ύ ∌ 0.0007 at 12 V, 400 kHz) and memory window as wide as 10 V, when a 5 nm-thick Al2O3 was used as a high bandgap (Eg ∌ 9 eV) barrier buffer layer between PZT (Eg ∌ 3.5 eV) and SiC (Eg ∌ 3.2 eV). Both structures on n- and p- SiC have shown electrical properties promising for the application to the gate stacks for the SiC field-effect transistors (FETs) and the design and process issues on different types of the metal-ferroelectric-silicon carbide field-effect transistors (FETs) have also been proposed.

Place, publisher, year, edition, pages
Boston, MA, 2002. Vol. 742, 371-379 p.
, Silicon Carbide 2002 - Materials, Processing and Devices
Keyword [en]
Ferroelectricity, Field effect transistors, Hysteresis, Microelectronics, Oxides, Thin films, Ferroelectric oxides, Silicon carbide
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
URN: urn:nbn:se:kth:diva-85426OAI: diva2:500018
MRS 2002
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