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Towards ferroelectric field effect transistors in 4H-silicon carbide
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0001-8108-2631
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2002 (English)In: Materials Research Society Symposium - Proceedings, Boston, MA, 2002, Vol. 742, 371-379 p.Conference paper, Published paper (Refereed)
Abstract [en]

We report on the integration of ferroelectric Pb(Zr,Ti)O3 (PZT) thin films on 4H-silicon carbide and their electrical properties. The structures of metal-ferroelectric-(insulator)-semiconductor MF(I)S and metal-ferroelectric-metal-insulator-semiconductor MFMIS have been fabricated and characterized. The MFMIS structures of Au/PZT/Pt/Ti/SiO2/SiC have shown fully saturated P-E hysteresis loops with remnant polarization Pr = 14.2 ΌC/cm2 and coercive field Ec = 58.9 kV/cm. The MFIS structures exhibited stable capacitance-voltage C-V loops with low conductance (<0.1 mS/cm2, tan Ύ ∌ 0.0007 at 12 V, 400 kHz) and memory window as wide as 10 V, when a 5 nm-thick Al2O3 was used as a high bandgap (Eg ∌ 9 eV) barrier buffer layer between PZT (Eg ∌ 3.5 eV) and SiC (Eg ∌ 3.2 eV). Both structures on n- and p- SiC have shown electrical properties promising for the application to the gate stacks for the SiC field-effect transistors (FETs) and the design and process issues on different types of the metal-ferroelectric-silicon carbide field-effect transistors (FETs) have also been proposed.

Place, publisher, year, edition, pages
Boston, MA, 2002. Vol. 742, 371-379 p.
Series
Silicon Carbide 2002 - Materials, Processing and Devices
Keyword [en]
Ferroelectricity, Field effect transistors, Hysteresis, Microelectronics, Oxides, Thin films, Ferroelectric oxides, Silicon carbide
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-85426OAI: oai:DiVA.org:kth-85426DiVA: diva2:500018
Conference
MRS 2002
Note
References: Wu, S.Y., (1974) IEEE Trans.Electron Devices, ED-21, p. 499; Scott, J.F., Araujo, C.A.P., (1989) Science, 246, p. 1400; Ishiwara, H., (2000) Current Status of Fabrication and Integration of Ferroelectric Gate FET'S, p. 427. , Warrendale, PA, USA, Mater. Res. Soc; Yu, J., Zhou, W., Xie, J., Zheng, Y., Dong, X., Liu, G., (1998) Fabrication of Ferroelectric FET with Metal/PZT/SiO2/Si Structure, p. 199. , Warrendale, PA, USA, Mater. Res. Soc; Tokumitsu, E., Fujii, G., Ishiwara, H., (1999) Appl. Phys. Lett., 75, pp. 575-577; Li, T., Hsu, S.T., Ulrich, B.D., Stecker, L., Evans, D.R., Lee, J.J., (2002) IEEE Electron Device Lett., 23, p. 339; Chow, T.P., (2000) Materials Science Forum, 338, p. 1155; Cooper J.A., Jr., (2002) Materials Science Forum, 389-393, p. 15; Mou, D., Petersson, C.S., Linnros, J., Rao, K.V., (1998) Appl. Phys. Lett., 73, p. 1532; Ashikaga, K., Ito, T., (1999) J. Appl. Phys., 85, p. 7471; http://www.cree.com, NC, USALin, Y., Zhao, B.R., Peng, H.B., Xu, B., Chen, H., Wu, F., Tao, H.J., Chen, J.S., (1998) Appl. Phys. Lett., 73, p. 2781; Koo, S.-M., Zheng, L.-R., Rao, K.V., (1999) J. Mater. Res., 14, p. 3833; Oh, S., Park, I.S., Kim, B.H., Lee, S.M., Yoo, C.Y., Lee, S.I., Koh, Y.B., Lee, M.Y., (1998) Int. Ferroelectrics, 20, p. 225; Robertson, J., (2000) J. Vac. Sci. & Techn. B, 18, pp. 1785-1791; Chin, A., Yang, M.Y., Sun, C.L., Chen, S.Y., (2001) IEEE Electron Device Lett., 22, p. 336; Minami, K.Y., (1993) IEEE Trans. Electron Devices, 40, p. 2011; Alexe, M., (1998) Appl. Phys. Lett., 72, p. 2283; Seager, C.H., McIntyre, D.C., Warren, W.L., Tuttle, B.A., (1996) Appl. Phys. Lett., 68, p. 2660; Sze, C.-Y., Lee, J.Y., (2000) J. Vac. Sci. Technol. B, 18, p. 2848; Afanas'ev, M.B.V.V., Pensl, G., Schulz, M.J., (1996) J. Appl. Phys., 79, p. 3108; Zetterling, C.-M., Östling, M., Nordell, N., Schön, O., Deschler, M., (1997) Appl. Phys. Lett., 70, p. 3549; Tan, J., Das, M.K., Cooper J.A., Jr., Mellocha, M.R., (1997) Appl. Phys. Lett., 70, p. 2280; Cooper J.A., Jr., (1997) Physica Status Solidi A, 162, pp. 305-320; Wang, X.W., Luo, Z.J., Ping, M.T., (2000) IEEE Trans. Electron Devices, 47, p. 4583 NR 20140805Available from: 2012-02-13 Created: 2012-02-13 Last updated: 2012-02-13Bibliographically approved

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Zetterling, Carl-Mikael

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