Measurements and simulations of self-heating and switching with 4H-SIC power BJTs
2003 (English)In: IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), Cambridge, 2003, 375-378 p.Conference paper (Refereed)
Transient measurements and device simulations were performed to investigate self-heating and switching with 4H-SiC BJTs. A current gain decrease was found during self-heating presumably due to reduced electron mobility with increasing temperature. Surface recombination increased the simulated maximum temperature but the current gain decrease during self-heating was similar as for bulk recombination. A fast switching of 0.5 A and 200 V was shown with a voltage rise-time of about 70 ns and fall-time of 50 ns. Turn-off measurements show a noticeable delay time before fall-off of the emitter current, indicating a significant amount of stored carriers in the base.
Place, publisher, year, edition, pages
Cambridge, 2003. 375-378 p.
, 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs Proceedings
Charge carriers, Computer simulation, Electron mobility, Silicon carbide, Inductive load switching, Heterojunction bipolar transistors
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-85430OAI: oai:DiVA.org:kth-85430DiVA: diva2:500022
Sponsors: University of Cambridge; UK EPSRC; IEEE; IEEJ; IEE NR 201408052012-02-132012-02-132012-02-13Bibliographically approved