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Measurements and simulations of self-heating and switching with 4H-SIC power BJTs
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
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2003 (English)In: IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), Cambridge, 2003, 375-378 p.Conference paper, Published paper (Refereed)
Abstract [en]

Transient measurements and device simulations were performed to investigate self-heating and switching with 4H-SiC BJTs. A current gain decrease was found during self-heating presumably due to reduced electron mobility with increasing temperature. Surface recombination increased the simulated maximum temperature but the current gain decrease during self-heating was similar as for bulk recombination. A fast switching of 0.5 A and 200 V was shown with a voltage rise-time of about 70 ns and fall-time of 50 ns. Turn-off measurements show a noticeable delay time before fall-off of the emitter current, indicating a significant amount of stored carriers in the base.

Place, publisher, year, edition, pages
Cambridge, 2003. 375-378 p.
Series
2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs Proceedings
Keyword [en]
Charge carriers, Computer simulation, Electron mobility, Silicon carbide, Inductive load switching, Heterojunction bipolar transistors
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-85430OAI: oai:DiVA.org:kth-85430DiVA: diva2:500022
Conference
ISPSD 2003
Note
Sponsors: University of Cambridge; UK EPSRC; IEEE; IEEJ; IEE NR 20140805Available from: 2012-02-13 Created: 2012-02-13 Last updated: 2012-02-13Bibliographically approved

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Zetterling, Carl-Mikael

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