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SiC power bipolar junction transistors: Modeling and improvement of the current gain
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0001-8108-2631
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-5845-3032
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2005 (English)In: 2005 European Conference on Power Electronics and Applications, Dresden, 2005, Vol. 2005, 1665888- p.Conference paper, Published paper (Refereed)
Abstract [en]

Epitaxial silicon carbide bipolar junction transistors (BJTs) for power switching applications have been designed and fabricated with a maximum breakdown voltage of 1100 V. The BJTs have high common emitter current gains with maximum values exceeding 60, a result that is attributed to design optimization of the base and emitter layers and to a high material quality obtained by a continuous epitaxial growth. Device simulations of the current gain as function of collector current have been compared with measurements. The measurements show a clear emitter-size effect that is in good agreement with simulations including surface recombination in interface states at the etched termination of the base-emitter junction. Simulations indicate an optimum emitter doping around 1-1019 cm-3 in agreement with typical state-of-the-art BJTs.

Place, publisher, year, edition, pages
Dresden, 2005. Vol. 2005, 1665888- p.
Keyword [en]
Device characterization, Device modeling, Power semiconductor device, Silicon carbide, Simulation, Computer simulation, Doping (additives), Electric breakdown, Epitaxial growth, Switching, Base-emitter junction, Bipolar transistors
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-85437Scopus ID: 2-s2.0-33947624305ISBN: 9075815085 (print)ISBN: 9789075815085 (print)OAI: oai:DiVA.org:kth-85437DiVA: diva2:500024
Conference
005 European Conference on Power Electronics and Applications; Dresden; 11 September 2005 through 14 September 2005
Note
References: Ryu, S.-H., (2001) IEEE Electron Device Letters, 22, p. 124; Huang, C.-F., (2003) IEEE Electron Device Letters, 24, p. 396; Krishnaswami, S., (2005) IEEE Electron Device Letters, 26, p. 175; Ivanov, P.A., (2004) Materials Science Forum, 457-460, p. 1145. , Vols; Domeij, M., (2005) Materials Science Forum, 483-485, p. 889. , Vols; Hayama, N., (1990) IEEE Electron Device Letters, 11, p. 388; Lindefelt, U., (1998) Journal of Applied Physics, 84, p. 2628; Schaffer, W.J., et., al., (1994) Mat. Res. Soc. Symp. Proc, 339, p. 595; Danielsson, E., et., al., (2004) Mater. Sci. Forum, 457-460, p. 1117. , Vols; Afanas'ev, V.V., et., al., (2002) Mater. Sci. Forum, 389-393, p. 961. , Vols; Schöner, A., (2002) Materials Science Forum, 389-393, p. 187. QC 20120308Available from: 2012-02-13 Created: 2012-02-13 Last updated: 2012-03-08Bibliographically approved

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Zetterling, Carl-Mikael

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