SiC power bipolar junction transistors: Modeling and improvement of the current gain
2005 (English)In: 2005 European Conference on Power Electronics and Applications, Dresden, 2005, Vol. 2005, 1665888- p.Conference paper (Refereed)
Epitaxial silicon carbide bipolar junction transistors (BJTs) for power switching applications have been designed and fabricated with a maximum breakdown voltage of 1100 V. The BJTs have high common emitter current gains with maximum values exceeding 60, a result that is attributed to design optimization of the base and emitter layers and to a high material quality obtained by a continuous epitaxial growth. Device simulations of the current gain as function of collector current have been compared with measurements. The measurements show a clear emitter-size effect that is in good agreement with simulations including surface recombination in interface states at the etched termination of the base-emitter junction. Simulations indicate an optimum emitter doping around 1-1019 cm-3 in agreement with typical state-of-the-art BJTs.
Place, publisher, year, edition, pages
Dresden, 2005. Vol. 2005, 1665888- p.
Device characterization, Device modeling, Power semiconductor device, Silicon carbide, Simulation, Computer simulation, Doping (additives), Electric breakdown, Epitaxial growth, Switching, Base-emitter junction, Bipolar transistors
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-85437ScopusID: 2-s2.0-33947624305ISBN: 9075815085ISBN: 9789075815085OAI: oai:DiVA.org:kth-85437DiVA: diva2:500024
005 European Conference on Power Electronics and Applications; Dresden; 11 September 2005 through 14 September 2005
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