Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
High performance SiGeC HBT technology for radio frequency applications
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-5845-3032
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0001-6459-749X
2004 (English)In: 2004 Asia-Pacific Radio Science Conference - Proceedings, 2004, 480-483 p.Conference paper, Published paper (Refereed)
Abstract [en]

In this paper, the current status of SiGeC bipolar technologies for high-speed and wireless applications is reviewed. The key process features and radio frequency (RF) performance of advanced SiGe bipolar processes are summarized. The different approaches to form a self-aligned base-emitter structure with minimum parasitics are discussed. SiGe:C epitaxy allows very good profile control of the narrow base doping peak, which enables cut-off frequencies above 300 GHz. Downscaling of device dimensions for improved RF performance is also investigated using TCAD simulations. Finally, novel device structures using SOI substrates are discussed.

Place, publisher, year, edition, pages
2004. 480-483 p.
Keyword [en]
300 GHz; HBT technology; SOI substrates; SiGe:C; TCAD; device dimension downscaling; epitaxy; high-speed bipolar processes; narrow base doping peak profile control; parasitics minimization; radio frequency devices; self-aligned base-emitter structure; Ge-Si alloys; carbon; doping profiles; epitaxial growth; heterojunction bipolar transistors; semiconductor materials; silicon-on-insulator; submillimetre wave transistors; technology CAD (electronics);
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-85953DOI: 10.1109/APRASC.2004.1422525Scopus ID: 2-s2.0-20844444163OAI: oai:DiVA.org:kth-85953DiVA: diva2:500236
Conference
2004 Asia-Pacific Radio Science Conference. Qingdao. 24 August 2004 - 27 August 2004
Note
QC 20120302Available from: 2012-02-13 Created: 2012-02-13 Last updated: 2012-03-02Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full textScopus

Authority records BETA

Malm, Gunnar

Search in DiVA

By author/editor
Östling, MikaelHaralson, ErikMalm, Gunnar
By organisation
Microelectronics and Information Technology, IMIT
Electrical Engineering, Electronic Engineering, Information Engineering

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 22 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf