High performance SiGeC HBT technology for radio frequency applications
2004 (English)In: 2004 Asia-Pacific Radio Science Conference - Proceedings, 2004, 480-483 p.Conference paper (Refereed)
In this paper, the current status of SiGeC bipolar technologies for high-speed and wireless applications is reviewed. The key process features and radio frequency (RF) performance of advanced SiGe bipolar processes are summarized. The different approaches to form a self-aligned base-emitter structure with minimum parasitics are discussed. SiGe:C epitaxy allows very good profile control of the narrow base doping peak, which enables cut-off frequencies above 300 GHz. Downscaling of device dimensions for improved RF performance is also investigated using TCAD simulations. Finally, novel device structures using SOI substrates are discussed.
Place, publisher, year, edition, pages
2004. 480-483 p.
300 GHz; HBT technology; SOI substrates; SiGe:C; TCAD; device dimension downscaling; epitaxy; high-speed bipolar processes; narrow base doping peak profile control; parasitics minimization; radio frequency devices; self-aligned base-emitter structure; Ge-Si alloys; carbon; doping profiles; epitaxial growth; heterojunction bipolar transistors; semiconductor materials; silicon-on-insulator; submillimetre wave transistors; technology CAD (electronics);
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-85953DOI: 10.1109/APRASC.2004.1422525ScopusID: 2-s2.0-20844444163OAI: oai:DiVA.org:kth-85953DiVA: diva2:500236
2004 Asia-Pacific Radio Science Conference. Qingdao. 24 August 2004 - 27 August 2004
QC 201203022012-02-132012-02-132012-03-02Bibliographically approved