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Multifunction Integration of Junction-MOSFETs and Nonvolatile FETs on a Single 4H-SiC Substrate for 300°C Operation
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0001-8108-2631
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-5845-3032
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2003 (English)In: Proc. IEEE International Electron Devices Meeting (IEDM) 2003, IEEE conference proceedings, 2003, 575-578 p.Conference paper, Published paper (Refereed)
Place, publisher, year, edition, pages
IEEE conference proceedings, 2003. 575-578 p.
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Other Electrical Engineering, Electronic Engineering, Information Engineering
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URN: urn:nbn:se:kth:diva-86107ISBN: 0-7803-7872-5 (print)OAI: oai:DiVA.org:kth-86107DiVA: diva2:500401
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IEDM 2003
Note
NR 20140805Available from: 2012-02-13 Created: 2012-02-13Bibliographically approved

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Zetterling, Carl-Mikael

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CiteExportLink to record
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