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Interfacing of Silicon-on-insulator nanophotonic circuits to the real world
KTH, School of Information and Communication Technology (ICT), Optics and Photonics (Closed 20120101), Photonics (Closed 20120101). KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP. KTH, School of Information and Communication Technology (ICT), Centres, Kista Photonics Research Center, KPRC. (Laboratory of Photonics and Microwave Engineering)ORCID iD: 0000-0001-5967-2651
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP. KTH, School of Information and Communication Technology (ICT), Centres, Kista Photonics Research Center, KPRC. (Laboratory of Photonics and Microwave Engineering)
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP. KTH, School of Information and Communication Technology (ICT), Centres, Kista Photonics Research Center, KPRC. (Laboratory of Optics and Microwave Engineering)
2010 (English)In: 2010 12th International Conference on Transparent Optical Networks (ICTON), IEEE Communications Society, 2010, 5549268- p.Conference paper, Published paper (Refereed)
Abstract [en]

Silicon-on-insulator material structure allows for very high light confinement in the silicon core due to its high refractive index. The advantages of this technology include the possibility to miniaturize devices and integrate different functions on a single chip, reduction of optical loss and power consumption and potential perspectives for low cost mass production in CMOS technology line. Together with these advantages some new problems appear in comparison to weakly guided light in silica-on-silicon components, causing additional challenges for researchers to be solved. Besides much higher demands for fabrication accuracy, high refractive index contrast introduces additional optical input/output coupling problems as well as much higher polarization sensitivity of nanophotonic structures. Here we will propose some solutions for these problems and illustrate them with designed and fabricated components

Place, publisher, year, edition, pages
IEEE Communications Society, 2010. 5549268- p.
Keyword [en]
Nanophotonics, coupling systems, photonic integrated circuits, silicon integration, silicon on insulator, silicon wire waveguides
National Category
Other Physics Topics
Research subject
SRA - ICT
Identifiers
URN: urn:nbn:se:kth:diva-86285DOI: 10.1109/ICTON.2010.5549268ISI: 000307108000281Scopus ID: 2-s2.0-77957254353ISBN: 978-1-4244-7799-9 (print)ISBN: 978-1-4244-7797-5 (print)OAI: oai:DiVA.org:kth-86285DiVA: diva2:500620
Conference
2010 12th International Conference on Transparent Optical Networks, ICTON 2010; Munich; Germany; 27 June 2010 through 1 July 2010
Note

QC 20120214

Available from: 2012-02-13 Created: 2012-02-13 Last updated: 2014-10-09Bibliographically approved

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Wosinski, Lech

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