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Cracks in GaN/AlN multiple quantum well structures grown by MBE
Chalmers University of Technology.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.ORCID iD: 0000-0002-0977-2598
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2008 (English)In: Journal of Physics, Conference Series, ISSN 1742-6588, E-ISSN 1742-6596, Vol. 100, 042026- p.Article in journal (Refereed) Published
Abstract [en]

Due to the large lattice constant mismatch and thermal expansion coefficient difference between GaN and AlN, large strain is generated inside the GaN/AlN multiple quantum wells, which causes cracks in the structure. We investigated such cracks by optical microscopy and AFM. The crack density was studied with buffer and cap layer thickness, the number of quantum well periods, and the temperature reduction rate after growth as parameters. It was found that the crack density increased exponentially, with the number of periods above 4. Besides, a very thin, 100 nm, GaN buffer layer and similar to 300 nm GaN cap layer greatly reduced the crack density.

Place, publisher, year, edition, pages
Institute of Physics (IOP), 2008. Vol. 100, 042026- p.
National Category
Materials Engineering
Identifiers
URN: urn:nbn:se:kth:diva-87846DOI: 10.1088/1742-6596/100/4/042026ISI: 000275655200074Scopus ID: 2-s2.0-58749099363OAI: oai:DiVA.org:kth-87846DiVA: diva2:501971
Conference
17th Int. Vacuum Congress and 13th Int. Conf. on Surface Science
Note
QC 20120221Available from: 2012-02-14 Created: 2012-02-14 Last updated: 2017-12-07Bibliographically approved

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Lourdudoss, Sebastian

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