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SiGe quantum wells for uncooled long wavelength infra-red radiation (LWIR) sensors
Acreo AB.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
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2008 (English)In: PROCEEDINGS OF THE 17TH INTERNATIONAL VACUUM CONGRESS/13TH INTERNATIONAL CONFERENCE ON SURFACE SCIENCE/INTERNATIONAL CONFERENCE ON NANOSCIENCE AND TECHNOLOGY, 2008, Vol. - 100, no - PART 4Conference paper, Published paper (Refereed)
Abstract [en]

- We demonstrate a novel single-crystalline high-performance thermistor material based on SiGe quantum well heterostructures. The SiGe/Si quantum wells are grown epitaxially on standard Si [001] substrates. Holes are used as charge carriers utilizing the discontinuities in the valence band structure. By optimizing design parameters such as the barrier height (by variation of the germanium content) and the fermi level Ef (by variation of the quantum well width and doping level) of the material, the layer structure can be tailored. Then a very high temperature coefficient of resistivity (TCR) can be obtained which is superior to the previous reported conventional thin film materials such as vanadium oxide and amorphous silicon. In addition, the high quality crystalline material promises very low 1/f-noise characteristics promoting an outstanding signal to noise ratio as well as well defined and uniform material properties. High-resolution X-ray diffraction was applied to characterize the thickness and Ge content of QWs. The results show sharp oscillations indicating an almost ideal super lattice with negligible relaxation and low defect density. The impact of growth temperature on the thermistor material properties was characterized by analyzing how the resulting strain primarily affects the performance of the TCR and 1/f noise. Results illustrate a value of 3.3 %/K for TCR with a low 1/f noise.

Place, publisher, year, edition, pages
2008. Vol. - 100, no - PART 4
Series
Journal of Physics Conference Series, ISSN 1742-6588 ; 100
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:kth:diva-87255DOI: 10.1088/1742-6596/100/4/042029ISI: 000275655200077Scopus ID: 2-s2.0-71449089040OAI: oai:DiVA.org:kth-87255DiVA: diva2:502000
Conference
17th International Vacuum Congress/13th International Conference on Surface Science/Internatinal Conference on Nanoscience and Technology. Stockholm, SWEDEN. JUL 02-06, 2007
Note
QC 20120216Available from: 2012-02-14 Created: 2012-02-14 Last updated: 2012-02-16Bibliographically approved

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