High-structural quality InN/In0.75Ga0.25N Multiple Quantum Wells Grown by Molecular Beam Epitaxy
2006 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 89, no 4, 041907-1-041907-3 p.Article in journal (Refereed) Published
InN/In0.75Ga0.25N multiple quantum wells (MQWs) were grown by rf plasma-assisted molecular beam epitaxy. The high-resolution transmission electron microscope and x-ray diffraction measurements showed evidence of growth of atomically smooth and sharp interface and good periodicity. Room-temperature photoluminescence emissions from InN quantum wells were observed at the wavelength range from 1.59 to 1.95 um by changing the well thickness. The unstrained valence band offset of InN/GaN was estimated to be ΔEv=0.9 eV by comparing the experimental transition wavelengths of the MQWs and a theoretical calculation considering strain effects and built-in, mainly piezoelectric, fields.
Place, publisher, year, edition, pages
2006. Vol. 89, no 4, 041907-1-041907-3 p.
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-87884DOI: 10.1063/1.2221869ISI: 000239376500040OAI: oai:DiVA.org:kth-87884DiVA: diva2:502002
QC 201203022012-02-142012-02-142012-03-02Bibliographically approved