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High-structural quality InN/In0.75Ga0.25N Multiple Quantum Wells Grown by Molecular Beam Epitaxy
Sophia University.
Sophia University.
Sophia University.
Sophia University.
2006 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 89, no 4, 041907-1-041907-3 p.Article in journal (Refereed) Published
Abstract [en]

InN/In0.75Ga0.25N multiple quantum wells (MQWs) were grown by rf plasma-assisted molecular beam epitaxy. The high-resolution transmission electron microscope and x-ray diffraction measurements showed evidence of growth of atomically smooth and sharp interface and good periodicity. Room-temperature photoluminescence emissions from InN quantum wells were observed at the wavelength range from 1.59 to 1.95 um by changing the well thickness. The unstrained valence band offset of InN/GaN was estimated to be ΔEv=0.9 eV by comparing the experimental transition wavelengths of the MQWs and a theoretical calculation considering strain effects and built-in, mainly piezoelectric, fields.

Place, publisher, year, edition, pages
2006. Vol. 89, no 4, 041907-1-041907-3 p.
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-87884DOI: 10.1063/1.2221869ISI: 000239376500040OAI: oai:DiVA.org:kth-87884DiVA: diva2:502002
Note
QC 20120302Available from: 2012-02-14 Created: 2012-02-14 Last updated: 2017-12-07Bibliographically approved

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