High performance infra-red detectors based on Si/SiGe multilayers quantum structure
2012 (English)In: Materials Science & Engineering: B. Solid-state Materials for Advanced Technology, ISSN 0921-5107, Vol. 177, no 17, 1563-1566 p.Article in journal (Refereed) Published
Recently, single crystalline (Sc) Si/SiGe multi quantum structure has been recognized as a new low-cost thermistor material for IR detection. Higher signal-to-noise (SNR) ratio and temperature coefficient of resistance (TCR) than existing thermistor materials have converted it to a candidate for infrared (IR) detection in night vision applications. In this study, the effects of Ge content, C doping and the Ni silicidation of the contacts on the performance of SiGe/Si thermistor material have been investigated. Finally, an uncooled thermistor material with TCR of -4.5%/K for 100 μm × 100 μm pixel sizes and low noise constant (K 1/f) value of 4.4 × 10 -15 is presented. The outstanding performance of the devices is due to Ni silicide contacts, smooth interfaces, and high quality multi quantum wells (MQWs) containing high Ge content.
Place, publisher, year, edition, pages
2012. Vol. 177, no 17, 1563-1566 p.
Detector, Infrared, Quantum, Sensor, SiGe, SNR, TCR
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-87259DOI: 10.1016/j.mseb.2011.10.013ISI: 000309853000009ScopusID: 2-s2.0-84866394506OAI: oai:DiVA.org:kth-87259DiVA: diva2:502015
QC 20121015. Updated from accepted to published.2012-02-142012-02-142013-04-16Bibliographically approved