Room-temperature operation of 1.55 um wavelength-range GaN/AlN quantum well intersubband photodetectors
2005 (English)In: IEICE Electronics Express, ISSN 1349-2543, Vol. 2, no 22, 566-571 p.Article in journal (Refereed) Published
The room-temperature operation of a GaN/AlN quantum well infrared photodetector (QWIP) using the intersubband transition (ISBT) in a GaN/AlN multiple quantum well (MQW) was demonstrated for the first time. The GaN/AlN QWIP was operated under DC biasing with a vertically conductive geometry to the MQW layer. A clear photoinduced response was observed for P polarized 1.47µm light irradiation. Dependencies of the photoresponse on the applied DC bias voltage, and the polarization and wavelength of incident light were evaluated for the GaN/AlN QWIP. The maximum responsivity was estimated to be 0.11mA/W for a DC bias of 15V at room temperature.
Place, publisher, year, edition, pages
2005. Vol. 2, no 22, 566-571 p.
GaN/AlN, intersubband, quantum well, photodetector, optical communication wavelength, nitride
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-87921DOI: 10.1587/elex.2.566ISI: 000239894900004OAI: oai:DiVA.org:kth-87921DiVA: diva2:502048
QC 201203012012-02-142012-02-142012-03-01Bibliographically approved