All-optical modulation using intersubband transitions at 1.55 mu m in GaN/AlN multiple quantum well
2005 (English)In: Physica Status Solidi. C, Current topics in solid state physics, ISSN 1610-1634, E-ISSN 1610-1642, Vol. 2, no 7, 2748-2752 p.Article in journal (Refereed) Published
All-optical modulation using intersubband transition (ISBT) resonant light (wavelength of 1.55 μm) and induced by UV interband transition (IBT) resonant light (325 nm or 213 nm) was demonstrated in a GaN/AlN multiple quantum well (MQW) waveguide device. The modulation was selective and occurred only for p-polarized ISBT resonant light in accordance with ISBT characteristics. An IBT relaxation time of 1.5 ns was obtained by fitting the experimental results with a three-level model, taking into consideration the valence band, the conduction band and the trap-state.
Place, publisher, year, edition, pages
2005. Vol. 2, no 7, 2748-2752 p.
IdentifiersURN: urn:nbn:se:kth:diva-88009DOI: 10.1002/pssc.200461589ISI: 000230421400174OAI: oai:DiVA.org:kth-88009DiVA: diva2:502068
QC 201203062012-02-142012-02-142012-03-06Bibliographically approved