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Experimental evaluation of carrier transport, gain, T0 and chirp of 1.55 mu;m MQW structures with different barrier compositions
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0003-3056-4678
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-4606-4865
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
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2005 (English)In: Optical Communication, 2005. ECOC 2005. 31st European Conference on, 2005, Vol. 2, 297-298 p.Conference paper, Published paper (Refereed)
Abstract [en]

Direct carrier transport measurements were performed for different InGaAsP/InGaAlAs MQW test structures. Shallow InGaAlAs barrier QW showed faster carrier transport. Semi-insulating regrown FP lasers with InGaAlAs barrier QW showed improved high temperature operation, modal gain, differential modal gain and chirp.

Place, publisher, year, edition, pages
2005. Vol. 2, 297-298 p.
Keyword [en]
1.55 mum; FP lasers; InGaAsP-InGaAlAs; InGaAsP/InGaAlAs MQW test structures; barrier compositions; carrier transport; differential modal gain; modal gain; III-V semiconductors; chirp modulation; gadolinium compounds; gallium arsenide; indium compounds; laser modes; laser transitions; quantum well lasers; semiconductor device measurement;
National Category
Telecommunications Atom and Molecular Physics and Optics
Identifiers
URN: urn:nbn:se:kth:diva-88042OAI: oai:DiVA.org:kth-88042DiVA: diva2:502480
Conference
European Conference on Optical Communication
Note

QC 20130225

Available from: 2012-02-14 Created: 2012-02-14 Last updated: 2013-02-25Bibliographically approved

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Schatz, RichardMarcinkevicius, Saulius

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Schatz, RichardMarcinkevicius, SauliusKjebon, OlleBerggren, Jesper
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