Experimental evaluation of carrier transport, gain, T0 and chirp of 1.55 mu;m MQW structures with different barrier compositions
2005 (English)In: Optical Communication, 2005. ECOC 2005. 31st European Conference on, 2005, Vol. 2, 297-298 p.Conference paper (Refereed)
Direct carrier transport measurements were performed for different InGaAsP/InGaAlAs MQW test structures. Shallow InGaAlAs barrier QW showed faster carrier transport. Semi-insulating regrown FP lasers with InGaAlAs barrier QW showed improved high temperature operation, modal gain, differential modal gain and chirp.
Place, publisher, year, edition, pages
2005. Vol. 2, 297-298 p.
1.55 mum; FP lasers; InGaAsP-InGaAlAs; InGaAsP/InGaAlAs MQW test structures; barrier compositions; carrier transport; differential modal gain; modal gain; III-V semiconductors; chirp modulation; gadolinium compounds; gallium arsenide; indium compounds; laser modes; laser transitions; quantum well lasers; semiconductor device measurement;
Telecommunications Atom and Molecular Physics and Optics
IdentifiersURN: urn:nbn:se:kth:diva-88042OAI: oai:DiVA.org:kth-88042DiVA: diva2:502480
European Conference on Optical Communication
QC 201302252012-02-142012-02-142013-02-25Bibliographically approved