III-Vs on Si for photonic applications-A monolithic approach
2012 (English)In: Materials Science & Engineering: B. Solid-state Materials for Advanced Technology, ISSN 0921-5107, Vol. 177, no 17, 1551-1557 p.Article in journal (Refereed) Published
Epitaxial lateral overgrowth (ELOG) technology is demonstrated as a viable technology to realize monolithic integration of III-Vs on silicon. As an alternative to wafer-to-wafer bonding and die-to-wafer bonding, ELOG provides an attractive platform for fabricating discrete and integrated components in high volume at low cost. A possible route for monolithic integration of III-Vs on silicon for silicon photonics is exemplified by the case of a monolithic evanescently coupled silicon laser (MECSL) by combining InP on Si/SiO2 through ELOG. Passive waveguide in MECSL also acts as the defect filtering mask in ELOG. The structural design of a monolithic evanescently coupled silicon laser (MECSL) and its thermal resistivity are established through simulations. Material studies to realize the above laser through ELOG are undertaken by studying appropriate ELOG pattern designs to achieve InP on narrow regions of silicon. We show that defect-free InP can be obtained on SiO2 as the first step which paves the way for realizing active photonic devices on Si/SiO2 waveguides, e.g. an MECSL.
Place, publisher, year, edition, pages
Elsevier, 2012. Vol. 177, no 17, 1551-1557 p.
Heteroepitaxy, Semiconductor laser, Monolithic integration, Epitaxial lateral overgrowth, Evanescently coupled silicon laser, Silicon photonics
Electrical Engineering, Electronic Engineering, Information Engineering
Research subject SRA - ICT
IdentifiersURN: urn:nbn:se:kth:diva-88854DOI: 10.1016/j.mseb.2011.12.006ISI: 000309853000007ScopusID: 2-s2.0-84866354328OAI: oai:DiVA.org:kth-88854DiVA: diva2:502512
QC 201211162012-02-142012-02-142015-03-03Bibliographically approved