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Scanning tunneling microscopy of CdSe single crystal cleaved and "real" surface
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1994 (English)In: Journal of Crystal Growth, ISSN 00220248 (ISSN), Vol. 138, no 1-4, 545-549 p.Article in journal (Refereed) Published
Abstract [en]

Ultrahigh vacuum-cleaved and as-grown surfaces of CdSe single crystals were investigated by scanning tunneling microscopy. The single crystals were grown by Reynolds-Green method. Striations and terrace-step structure have been found. The surface atomic geometry was found and investigated. The (1120) face geometry (structure formed by elementary cell of 0.75 × 0.7 nm2) as well as other type structures (e.g., 2.1 × 0.75 nm2 elementary cell) have been determined. The variations of the band gap at the surface have been found. The band values in the range 2.0-2.6 eV on a cleaved surface and 1.1-2.0 eV on an as-grown surface were measured and explained as being the influence of surface relaxation and gas adsorption. © 1994.

Place, publisher, year, edition, pages
1994. Vol. 138, no 1-4, 545-549 p.
Keyword [en]
Band structure, Crystal atomic structure, Energy gap, Epitaxial growth, Microscopic examination, Band gap, Scanning tunneling microscopy, Semiconducting cadmium selenide, Surface relaxation, Semiconducting cadmium compounds
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:kth:diva-83041OAI: oai:DiVA.org:kth-83041DiVA: diva2:502744
Note
Correspondence Address: Vaitkus, J.; Department of Semiconductor Physics, Vilnius University, 2734 Vilnius, Lithuania NR 20140805Available from: 2012-02-14 Created: 2012-02-12 Last updated: 2012-02-14Bibliographically approved

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