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Adsorption of Sn onSi(111)7 × 7: reconstructions in the monolayer regime
KTH, Superseded Departments, Physics.
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1994 (English)In: Surface Science, ISSN 00396028 (ISSN), Vol. 314, no 2, 179-187 p.Article in journal (Refereed) Published
Abstract [en]

Different monolayer phases of Sn on Si(111)7 × 7 have been studied by means of scanning tunneling microscopy (STM), core-level photoelectron spectroscopy (XPS), and Rutherford backscattering spectrometry (RBS). The STM results show that 3 × 3 reconstructions are obtained for room-temperature deposition of 1 3 ML of Sn followed by sample annealing in a broad temperature range. A T4 Sn adatom 3 ×3 phase is formed for temperatures between 500 and 800°C, with a concentration of defects that is strongly dependent on the temperature and which is as high as 25% for the lowest temperatures. Above 825°C a second 3×3 adatom reconstruction is formed, a mosaic-like phase with a 1:1 mixture of Si and Sn atoms in T4 positions. The results from investigations of the higher coverage 2 3 × 2 3 reconstruction by XPS and RBS support the theory that this phase is a two-layer epitaxial Sn structure with all Si(111) dangling bonds saturated. The Sn coverage for this phase was determined to be between 1 and 1.2 ML. © 1994.

Place, publisher, year, edition, pages
1994. Vol. 314, no 2, 179-187 p.
Keyword [en]
Adsorption, Annealing, Atoms, Defects, Microscopic examination, Mixtures, Photoelectron spectroscopy, Semiconducting silicon, Spectrometry, Thermal effects, Tin, Adatom reconstruction, Monolayers, Rutherford backscattering spectrometry, Scanning tunneling microscopy, Surface phenomena
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:kth:diva-83039OAI: oai:DiVA.org:kth-83039DiVA: diva2:502751
Note
Correspondence Address: Göthelid, M.; Department of Physics, Materials Physics, Royal Institute of Technology, S-100 44 Stockholm, Sweden NR 20140805Available from: 2012-02-14 Created: 2012-02-12 Last updated: 2012-02-14Bibliographically approved

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