Adsorption of Sn onSi(111)7 Ã 7: reconstructions in the monolayer regime
1994 (English)In: Surface Science, ISSN 00396028 (ISSN), Vol. 314, no 2, 179-187 p.Article in journal (Refereed) Published
Different monolayer phases of Sn on Si(111)7 Ã— 7 have been studied by means of scanning tunneling microscopy (STM), core-level photoelectron spectroscopy (XPS), and Rutherford backscattering spectrometry (RBS). The STM results show that 3 Ã— 3 reconstructions are obtained for room-temperature deposition of 1 3 ML of Sn followed by sample annealing in a broad temperature range. A T4 Sn adatom 3 Ã—3 phase is formed for temperatures between 500 and 800Â°C, with a concentration of defects that is strongly dependent on the temperature and which is as high as 25% for the lowest temperatures. Above 825Â°C a second 3Ã—3 adatom reconstruction is formed, a mosaic-like phase with a 1:1 mixture of Si and Sn atoms in T4 positions. The results from investigations of the higher coverage 2 3 Ã— 2 3 reconstruction by XPS and RBS support the theory that this phase is a two-layer epitaxial Sn structure with all Si(111) dangling bonds saturated. The Sn coverage for this phase was determined to be between 1 and 1.2 ML. Â© 1994.
Place, publisher, year, edition, pages
1994. Vol. 314, no 2, 179-187 p.
Adsorption, Annealing, Atoms, Defects, Microscopic examination, Mixtures, Photoelectron spectroscopy, Semiconducting silicon, Spectrometry, Thermal effects, Tin, Adatom reconstruction, Monolayers, Rutherford backscattering spectrometry, Scanning tunneling microscopy, Surface phenomena
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:kth:diva-83039OAI: oai:DiVA.org:kth-83039DiVA: diva2:502751
Correspondence Address: GÃ¶thelid, M.; Department of Physics, Materials Physics, Royal Institute of Technology, S-100 44 Stockholm, Sweden NR 201408052012-02-142012-02-122012-02-14Bibliographically approved