Cyclic growth of strain-relaxed islands
1994 (English)In: Physical Review Letters, ISSN 00319007 (ISSN), Vol. 73, no 2, 300-303 p.Article in journal (Refereed) Published
Growth of Ge islands on Si(001) is observed in real time with high spatial resolution, using UHV transmission electron microscopy. We are able to monitor the formation of successive strain-relieving dislocations. The shape of the island oscillates as it grows, with each cycle corresponding to the introduction of one dislocation. Such growth cycles are shown to be a general feature of the growth of strain-relaxed islands, occurring even in equilibrium. Â© 1994 The American Physical Society.
Place, publisher, year, edition, pages
1994. Vol. 73, no 2, 300-303 p.
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:kth:diva-83037DOI: 10.1103/PhysRevLett.73.300OAI: oai:DiVA.org:kth-83037DiVA: diva2:502756
Correspondence Address: LeGoues, F.K.; IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY 10598, United States NR 201408052012-02-142012-02-122012-02-14Bibliographically approved