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Cyclic growth of strain-relaxed islands
(IBM T.J. Watson Reserch Center)
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1994 (English)In: Physical Review Letters, ISSN 00319007 (ISSN), Vol. 73, no 2, 300-303 p.Article in journal (Refereed) Published
Abstract [en]

Growth of Ge islands on Si(001) is observed in real time with high spatial resolution, using UHV transmission electron microscopy. We are able to monitor the formation of successive strain-relieving dislocations. The shape of the island oscillates as it grows, with each cycle corresponding to the introduction of one dislocation. Such growth cycles are shown to be a general feature of the growth of strain-relaxed islands, occurring even in equilibrium. © 1994 The American Physical Society.

Place, publisher, year, edition, pages
1994. Vol. 73, no 2, 300-303 p.
National Category
Condensed Matter Physics
URN: urn:nbn:se:kth:diva-83037DOI: 10.1103/PhysRevLett.73.300OAI: diva2:502756
Correspondence Address: LeGoues, F.K.; IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY 10598, United States NR 20140805Available from: 2012-02-14 Created: 2012-02-12 Last updated: 2012-02-14Bibliographically approved

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