Relaxation mechanism of Ge islands/Si(001) at low temperature
1995 (English)In: Applied Physics Letters, ISSN 00036951 (ISSN), Vol. 67Article in journal (Refereed) Published
Strained layers generally relax by dislocation glide. Here, using UHV-TEM, we study growth of Ge islands on Si(001) at â‰²350Â°C. We find that, although conventional relaxation (i.e., via glide of 60Â°dislocations) is suppressed, the islands grow relaxed from the outset, by direct incorporation of sessile 90Â°dislocations into the edge of the growing island. Paradoxically, the low-temperature islands are more fully relaxed than those grown at higher temperature.Â© 1995 American Institute of Physics.
Place, publisher, year, edition, pages
1995. Vol. 67
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:kth:diva-83030DOI: 10.1063/1.115138OAI: oai:DiVA.org:kth-83030DiVA: diva2:502770
Correspondence Address: LeGoues, F.K.; IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, NY 10598, United States NR 201408052012-02-142012-02-122012-02-14Bibliographically approved