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Relaxation mechanism of Ge islands/Si(001) at low temperature
(IBM T.J. Watson Reserch Center)
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1995 (English)In: Applied Physics Letters, ISSN 00036951 (ISSN), Vol. 67Article in journal (Refereed) Published
Abstract [en]

Strained layers generally relax by dislocation glide. Here, using UHV-TEM, we study growth of Ge islands on Si(001) at ≲350°C. We find that, although conventional relaxation (i.e., via glide of 60°dislocations) is suppressed, the islands grow relaxed from the outset, by direct incorporation of sessile 90°dislocations into the edge of the growing island. Paradoxically, the low-temperature islands are more fully relaxed than those grown at higher temperature.© 1995 American Institute of Physics.

Place, publisher, year, edition, pages
1995. Vol. 67
National Category
Condensed Matter Physics
URN: urn:nbn:se:kth:diva-83030DOI: 10.1063/1.115138OAI: diva2:502770
Correspondence Address: LeGoues, F.K.; IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, NY 10598, United States NR 20140805Available from: 2012-02-14 Created: 2012-02-12 Last updated: 2012-02-14Bibliographically approved

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