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Structure of the wafer fused InP (001)-GaAs (001) interface
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1997 (English)In: Philosophical Magazine Letters, ISSN 09500839 (ISSN), Vol. 76, no 6, 445-452 p.Article in journal (Refereed) Published
Abstract [en]

A structural study of wafer fused InP-GaAs interfaces has been carried out. The geometry of the dislocation network which accommodates the twist and the lattice mismatch is first given using a geometrical approach. Cross-sectional transmission electron microscopy and plan view observations are presented. Two different misfit cases are observed. (1) When no twist is present, the 3.7% lattice mismatch is relaxed by a regular square network of dislocations with pure edge character. (2) When an additional twist is present, a square network of dislocations results as well but here the dislocations have a mixed character; 60° dislocations are also observed, some form closed defect circuits and others very likely accommodate a small tilt. The interaction between the 60° dislocations and the edge dislocations is explained in detail. Voids or inclusions are also observed as well as additional dislocations which may accommodate part of the thermal mismatch. © 1997 Taylor & Francis Ltd.

Place, publisher, year, edition, pages
1997. Vol. 76, no 6, 445-452 p.
Keyword [en]
Crystal lattices, Crystal orientation, Dislocations (crystals), Semiconducting gallium arsenide, Semiconducting indium phosphide, Semiconductor device structures, Transmission electron microscopy, Lattice mismatch, Thermal mismatch, Semiconductor junctions
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:kth:diva-83027OAI: oai:DiVA.org:kth-83027DiVA: diva2:502777
Note
References: Amelinckx, S., (1956) Phil. Mag., 1, p. 269; Balluffi, R.W., Saas, S.L., Schober, T., (1972) Phil. Mag., 26, p. 585; Benamara, M., Rocher, A., Laporte, A., Sarrabayrousse, G., LescouzÚres, L., Peyrelavigne, A., (1995) Microscopy of Semiconducting Materials 1995, Inst. Phys. Conf. Ser., 146. , Bristol: Institute of Physics; Bollmann, W., (1970) Crystal Defects and Crystalline Interfaces, , Berlin: Springer-Verlag; Hirsch, P., Howie, A., Nicholson, R.B., Whelan, M.J., Pashley, D.W., (1965) Electron Microscopy of Thin Crystals, , New York: Krieger; Kang, J.M., Nouaoura, M., LassabatÚre, L., Rocher, A., (1994) J. Cryst. Growth, 143, p. 115; Komninou, P., Stoemenos, G., Dimitrakopoulos, G.P., Karakostas, T., (1994) J. Appl. Phys., 75, p. 143; Lo, Y.H., Bhat, R., Hwang, D.M., Koza, M.A., Lee, T.P., (1991) Appl. Phys. Lett., 58, p. 1961; Okuno, Y., Uomi, K., Aoki, M., Taniwatari, T., Susuki, M., Kondow, M., (1995) Appl. Phys. Lett., 66, p. 451; Patriarche, G., JeannÚs, F., Oudar, J.L., Glas, F., (1997) Microscopy of Semiconducting Materials 1997, Inst. Phys. Conf. Ser., 157. , (Bristol: Institute of Physics) (to be published); Ram, R.J., Dudley, J.J., Bowers, J.E., Yang, L., Carey, K., Rosner, S.J., Nauka, K., (1995) J. App. Phys., 78, p. 4227; Sagalowicz, L., Jouneau, P.H., Rudra, A., Syrbu, V., Kapon, E., (1997) Boundaries and Interfaces in Materials, TMS Conf. Proc., , (The Materials Society) (to be published); Salomonson, F., Streusel, K., Bentell, J., Hammar, M., Keiper, D., Westphalen, R., Piprek, J., Behrend, J., (1997) J. Appl. Phys., , in the press; Shieu, F.S., Saas, L., (1990) Acta Metall. Mater., 9, p. 1653; Syrbu, A.V., Fernandez, J., Behrend, J., Berseth, C.A., Carlin, J.F., Rudra, A., Kapon, E., (1997) Electron. Lett., 33, p. 866; Thomson, N., (1953) Proc. Phys. Soc. B, 66, p. 481; Wada, H., Ogawa, Y., Kamijoh, T., (1993) Appl. Phys. Lett., 62, p. 738; Zhu, J.G., Carter, C.B., (1990) Phil. Mag. A, 62, p. 319 NR 20140805Available from: 2012-02-14 Created: 2012-02-12 Last updated: 2012-02-14Bibliographically approved

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