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Wafer fused p-InP/p-GaAs heterojunctions
KTH, Superseded Departments, Electronics.ORCID iD: 0000-0002-9040-4740
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1998 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 83, no 2, 768-774 p.Article in journal (Refereed) Published
Abstract [en]

This article reports on the fabrication and characterization of wafer fused heterojunctions between p-InP and p-GaAs. Secondary ion mass spectroscopy was used to characterize doping profiles across the interface as well as the interface contamination with oxygen or carbon. The crystalline quality of the fused material was characterized using cross section and plan-view transmission electron microscopy. The electrical properties of the fused interface were studied as a function of various doping elements such as Be and Zn in InP or Zn and C in GaAs as well as for different acceptor concentrations in GaAs. Finally, the electrical characteristics were analyzed using a numerical model that includes thermionic emission and tunneling across the heterobarrier. © 1998 American Institute of Physics.

Place, publisher, year, edition, pages
1998. Vol. 83, no 2, 768-774 p.
National Category
Condensed Matter Physics
URN: urn:nbn:se:kth:diva-83026OAI: diva2:502786

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