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Systematics of electrical conductivity across InP to GaAs wafer fused interfaces
KTH, Superseded Departments, Electronics.
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1998 (English)In: Conference Proceedings - International Conference on Indium Phosphide and Related Materials, Tsukuba, Jpn, 1998, no Piscataway, NJ, United States, 801-804 p.Conference paper, Published paper (Refereed)
Abstract [en]

We report on the electrical and compositional characterization of wafer fused isotype heterojunctions between Zn, C or Si doped GaAs and Zn or Si doped InP. The junctions were characterized with current-voltage and secondary ion mass spectrometry (SIMS) measurements. It is demonstrated that very low-resistive junctions can be obtained in each case, but also that there is a strong influence from the detailed sample structure and processing conditions. SIMS was used to monitor the doping concentration across the interface as well as the impurity concentration of oxygen, carbon and iron.

Place, publisher, year, edition, pages
Tsukuba, Jpn, 1998. no Piscataway, NJ, United States, 801-804 p.
Series
Proceedings of the 1998 International Conference on Indium Phosphide and Related Materials
Keyword [en]
Carbon, Crystal impurities, Electric conductivity, Interfaces (materials), Iron, Oxygen, Secondary ion mass spectrometry, Semiconducting gallium arsenide, Semiconducting indium phosphide, Semiconductor device structures, Semiconductor doping, Silicon wafers, Low resistive junctions, Water fusion, Heterojunctions
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:kth:diva-83023OAI: oai:DiVA.org:kth-83023DiVA: diva2:502792
Conference
International Conference on Indium Phosphide and Related Materials
Note
Sponsors: IEEE NR 20140805Available from: 2012-02-14 Created: 2012-02-12 Last updated: 2012-02-14Bibliographically approved

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