Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
All epitaxial single-fused 1.55ÎŒm vertical cavity laser based on an InP Bragg reflector
Show others and affiliations
1998 (English)In: Conference Proceedings - International Conference on Indium Phosphide and Related Materials, Tsukuba, Jpn, 1998, no Piscataway, NJ, United States, 303-306 p.Conference paper, Published paper (Refereed)
Abstract [en]

We have realised all epitaxial 1.55Όm vertical cavity lasers by employing a single wafer-fusion step. The laser structure is fabricated by fusing a 32 period p-doped (C) AlGaAs/GaAs top mirror to a half cavity structure consisting of a 50 period n-doped (Si) GaInAsP/InP bottom mirror and 9QW GaInAsP-active material. Laser mesas are fabricated using a wet etching procedure for the top mirror. The top mirror also contains an AlAs layer for oxidation for current confinement. The lasers operate pulsed for temperatures up to 40°C and at pulse lengths of 10Όs up to 5°C. The minimum threshold current density at room temperature is 1.8kA/cm2 for a device diameter of 55Όm. Compared to non-oxidised laser diodes, the oxidation decreases the threshold currents significantly.

Place, publisher, year, edition, pages
Tsukuba, Jpn, 1998. no Piscataway, NJ, United States, 303-306 p.
Series
Proceedings of the 1998 International Conference on Indium Phosphide and Related Materials
Keyword [en]
Current density, Epitaxial growth, Etching, Laser pulses, Mirrors, Semiconducting aluminum compounds, Semiconducting gallium arsenide, Semiconducting indium phosphide, Bragg reflector lasers, Threshold current density, Vertical cavity surface emitting lasers, Wet etching, Semiconductor lasers
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:kth:diva-83022OAI: oai:DiVA.org:kth-83022DiVA: diva2:502798
Conference
International Conference on Indium Phosphide and Related Materials
Note
Sponsors: IEEE NR 20140805Available from: 2012-02-14 Created: 2012-02-12 Last updated: 2012-02-14Bibliographically approved

Open Access in DiVA

No full text

Other links

http://www.scopus.com/inward/record.url?eid=2-s2.0-0032296388&partnerID=40&md5=a63863470d3bc8abaf955f8bd9b18545
By organisation
Electronics
Condensed Matter Physics

Search outside of DiVA

GoogleGoogle Scholar

urn-nbn

Altmetric score

urn-nbn
Total: 21 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf