All epitaxial single-fused 1.55ÎŒm vertical cavity laser based on an InP Bragg reflector
1998 (English)In: Conference Proceedings - International Conference on Indium Phosphide and Related Materials, Tsukuba, Jpn, 1998, no Piscataway, NJ, United States, 303-306 p.Conference paper (Refereed)
We have realised all epitaxial 1.55ÎŒm vertical cavity lasers by employing a single wafer-fusion step. The laser structure is fabricated by fusing a 32 period p-doped (C) AlGaAs/GaAs top mirror to a half cavity structure consisting of a 50 period n-doped (Si) GaInAsP/InP bottom mirror and 9QW GaInAsP-active material. Laser mesas are fabricated using a wet etching procedure for the top mirror. The top mirror also contains an AlAs layer for oxidation for current confinement. The lasers operate pulsed for temperatures up to 40Â°C and at pulse lengths of 10ÎŒs up to 5Â°C. The minimum threshold current density at room temperature is 1.8kA/cm2 for a device diameter of 55ÎŒm. Compared to non-oxidised laser diodes, the oxidation decreases the threshold currents significantly.
Place, publisher, year, edition, pages
Tsukuba, Jpn, 1998. no Piscataway, NJ, United States, 303-306 p.
, Proceedings of the 1998 International Conference on Indium Phosphide and Related Materials
Current density, Epitaxial growth, Etching, Laser pulses, Mirrors, Semiconducting aluminum compounds, Semiconducting gallium arsenide, Semiconducting indium phosphide, Bragg reflector lasers, Threshold current density, Vertical cavity surface emitting lasers, Wet etching, Semiconductor lasers
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:kth:diva-83022OAI: oai:DiVA.org:kth-83022DiVA: diva2:502798
International Conference on Indium Phosphide and Related Materials
Sponsors: IEEE NR 201408052012-02-142012-02-122012-02-14Bibliographically approved