Design optimization of InGaAsP-InGaAlAs 1.55 mu;m strain-compensated MQW lasers for direct modulation applications
2004 (English)In: Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on, IEEE , 2004, 418-421 p.Conference paper (Refereed)
A comprehensive simulation study of InGaAsP (well)/InGaAlAs(barrier) 1.55 mu;m strain-compensated MQW lasers is presented. For MQWs, a uniform vertical distribution of holes is achieved due to a reduced effective hole confinement energy by optimizing the bandgap and strain of the barriers and p-doping in the active region. Some preliminary results are also presented for the manufactured lasers using these QWs indicating a good material platform.
Place, publisher, year, edition, pages
IEEE , 2004. 418-421 p.
, Conference Proceedings - International Conference on Indium Phosphide and Related Materials, ISSN 1092-8669
InGaAlAs, InGaAsP, MQW lasers
Telecommunications Atom and Molecular Physics and Optics
IdentifiersURN: urn:nbn:se:kth:diva-89342DOI: 10.1109/ICIPRM.2004.1442745ScopusID: 2-s2.0-23744446373ISBN: 0-7803-8595-0OAI: oai:DiVA.org:kth-89342DiVA: diva2:502913
2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM; Kagoshima; 31 May 2004 through 4 June 2004
QC 201202172012-02-142012-02-142014-12-09Bibliographically approved