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Design optimization of InGaAsP-InGaAlAs 1.55 mu;m strain-compensated MQW lasers for direct modulation applications
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT. (Photonics)
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
KTH, School of Information and Communication Technology (ICT), Material Physics (Closed 20120101), Semiconductor Materials, HMA (Closed 20120101).
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT. (Photonics)
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2004 (English)In: Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on, IEEE , 2004, 418-421 p.Conference paper, Published paper (Refereed)
Abstract [en]

A comprehensive simulation study of InGaAsP (well)/InGaAlAs(barrier) 1.55 mu;m strain-compensated MQW lasers is presented. For MQWs, a uniform vertical distribution of holes is achieved due to a reduced effective hole confinement energy by optimizing the bandgap and strain of the barriers and p-doping in the active region. Some preliminary results are also presented for the manufactured lasers using these QWs indicating a good material platform.

Place, publisher, year, edition, pages
IEEE , 2004. 418-421 p.
Series
Conference Proceedings - International Conference on Indium Phosphide and Related Materials, ISSN 1092-8669
Keyword [en]
InGaAlAs, InGaAsP, MQW lasers
National Category
Telecommunications Atom and Molecular Physics and Optics
Identifiers
URN: urn:nbn:se:kth:diva-89342DOI: 10.1109/ICIPRM.2004.1442745Scopus ID: 2-s2.0-23744446373ISBN: 0-7803-8595-0 (print)OAI: oai:DiVA.org:kth-89342DiVA: diva2:502913
Conference
2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM; Kagoshima; 31 May 2004 through 4 June 2004
Note

QC 20120217

Available from: 2012-02-14 Created: 2012-02-14 Last updated: 2014-12-09Bibliographically approved

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Schatz, Richard

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Akram, NadeemSilfvenius, ChristoferBerggren, JesperKjebon, OlleSchatz, Richard
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Microelectronics and Information Technology, IMITSemiconductor Materials, HMA (Closed 20120101)
TelecommunicationsAtom and Molecular Physics and Optics

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