Impact of spatial hole burning on modulation response of vertical cavity surface emitting lasers
2002 (English)In: 4thLaser and Fiber-Optical Networks Modeling, 2002. Proceedings of LFNM 2002. International Workshop on, 2002, 108-111 p.Conference paper (Refereed)
It has been long known that spatial hole burning (SHB) has a profound influence on the characteristics of semiconductor lasers. SHB refers to the local depletion of the carrier density at points within the laser where the modal intensity is large. The depletion will reduce the overlap between the gain distribution and photon distribution for the lasing mode. This will in general lead to an increase of the average carrier density to maintain the threshold gain needed for lasing. It will also often lead to reduced side mode suppression since the gain carrier overlap may increase for a competing side mode with different intensity distribution than the main mode. In this paper we theoretically investigate the influence SHB has on the VCSEL modulation response.
Place, publisher, year, edition, pages
2002. 108-111 p.
VCSEL modulation response; average carrier density; competing side mode; gain carrier overlap; intensity distribution; lasing mode; modal intensity; modulation response; reduced side mode suppression; semiconductor lasers; spatial hole burning; threshold gain; vertical cavity surface emitting lasers; carrier density; electro-optical modulation; optical hole burning; semiconductor lasers; surface emitting lasers;
Telecommunications Atom and Molecular Physics and Optics
IdentifiersURN: urn:nbn:se:kth:diva-89319DOI: 10.1109/LFNM.2002.1014125OAI: oai:DiVA.org:kth-89319DiVA: diva2:502923
International Workshop on Laser and Fiber-Optical Networks Modeling
NR 201408052012-02-142012-02-142012-02-14Bibliographically approved