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High-performance 1.2- mu;m highly strained InGaAs/GaAs quantum well lasers
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
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2002 (English)In: Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th, 2002, 107-110 p.Conference paper (Refereed)
Abstract [en]

The growth and characterisation of high-performance 1.2- mu;m highly strained InGaAs/GaAs single quantum well (SQW) laser diodes is reported. High output power in excess of 200 mW per facet was obtained from ridge-waveguide (RWG) lasers at an emission wavelength of 1230 nm. These lasers operate CW to at least 145 deg;C and show a high characteristic temperature of 150 K. The net modal gain was measured using the method described by Hakki and Paoli (1975).

Place, publisher, year, edition, pages
2002. 107-110 p.
Keyword [en]
1.2 micron; 1230 nm; 145 degC; 150 K; 200 mW; CW operation; InGaAs-GaAs; VPE growth; characterisation; high characteristic temperature; high output power; high-performance SQW LDs; highly strained InGaAs/GaAs SQW; low-pressure MOVPE; net modal gain measurement; ridge-waveguide lasers; single quantum well laser diodes; III-V semiconductors; MOCVD; gallium arsenide; indium compounds; laser transitions; optical fabrication; quantum well lasers; ridge waveguides; semiconductor growth; vapour phase epitaxial growth; waveguide lasers;
National Category
Telecommunications Atom and Molecular Physics and Optics
URN: urn:nbn:se:kth:diva-89313DOI: 10.1109/ICIPRM.2002.1014135OAI: diva2:502937
Indium Phosphide and Related Materials Conference
NR 20140805Available from: 2012-02-14 Created: 2012-02-14 Last updated: 2012-02-14Bibliographically approved

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Schatz, RichardHammar, Mattias
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