High-performance 1.2- mu;m highly strained InGaAs/GaAs quantum well lasers
2002 (English)In: Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th, 2002, 107-110 p.Conference paper (Refereed)
The growth and characterisation of high-performance 1.2- mu;m highly strained InGaAs/GaAs single quantum well (SQW) laser diodes is reported. High output power in excess of 200 mW per facet was obtained from ridge-waveguide (RWG) lasers at an emission wavelength of 1230 nm. These lasers operate CW to at least 145 deg;C and show a high characteristic temperature of 150 K. The net modal gain was measured using the method described by Hakki and Paoli (1975).
Place, publisher, year, edition, pages
2002. 107-110 p.
1.2 micron; 1230 nm; 145 degC; 150 K; 200 mW; CW operation; InGaAs-GaAs; VPE growth; characterisation; high characteristic temperature; high output power; high-performance SQW LDs; highly strained InGaAs/GaAs SQW; low-pressure MOVPE; net modal gain measurement; ridge-waveguide lasers; single quantum well laser diodes; III-V semiconductors; MOCVD; gallium arsenide; indium compounds; laser transitions; optical fabrication; quantum well lasers; ridge waveguides; semiconductor growth; vapour phase epitaxial growth; waveguide lasers;
Telecommunications Atom and Molecular Physics and Optics
IdentifiersURN: urn:nbn:se:kth:diva-89313DOI: 10.1109/ICIPRM.2002.1014135OAI: oai:DiVA.org:kth-89313DiVA: diva2:502937
Indium Phosphide and Related Materials Conference
NR 201408052012-02-142012-02-142012-02-14Bibliographically approved