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GaAs/AlGaAs buried-heterostructure laser diodes with semi-insulating GaInP:Fe regrowth
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT. KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.ORCID iD: 0000-0002-0977-2598
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2001 (English)In: Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on, 2001, Vol. 2Conference paper, Published paper (Refereed)
Abstract [en]

GaAs/AlGaAs buried-heterostructure in-plane lasers and vertical-cavity surface-emitting lasers using GaInP:Fe as the burying layer have been fabricated and investigated. Regrowth of GaInP:Fe around etched laser mesas was achieved by hydride vapor phase epitaxy. The lasers exhibit good performance under CW operation and show promising high-speed characteristics.

Place, publisher, year, edition, pages
2001. Vol. 2
Keyword [en]
850 nm; CW operation; GaAs-AlGaAs; GaAs/AlGaAs buried-heterostructure laser diodes; GaInP:Fe; GaInP:Fe burying layer; etched laser mesas; high-speed characteristics; hydride vapor phase epitaxy; in-plane lasers; performance; regrowth; semi-insulating GaInP:Fe regrowth; vertical-cavity surface-emitting lasers; III-V semiconductors; MOCVD; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; iron; optical fabrication; semiconductor growth; semiconductor lasers; surface emitting lasers; vapour phase epitaxial growth;
National Category
Telecommunications Atom and Molecular Physics and Optics
Identifiers
URN: urn:nbn:se:kth:diva-89312DOI: 10.1109/CLEOPR.2001.971097OAI: oai:DiVA.org:kth-89312DiVA: diva2:502946
Conference
Pacific Rim Conference on Lasers and Electro-Optics
Note
NR 20140805Available from: 2012-02-14 Created: 2012-02-14 Last updated: 2012-02-14Bibliographically approved

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Lourdudoss, SebastianSchatz, Richard

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