Selectively oxidized vertical-cavity surface-emitting lasers for high-speed data communication
2001 (English)In: Proc. SPIE 4286, SPIE's Optoelectronics 2001, Photonics West, San Jose, US, Bellingham, WA, ETATS-UNIS: Society of Photo-Optical Instrumentation Engineers , 2001, Vol. 4286, 96- p.Conference paper (Refereed)
MITEL Semiconductor is developing the next generation low cost, high performance transceivers for data communication. The increasing quantity of data being transferred over the Internet demands very high capacity interconnects. A low cost, high-performance alternative is the use of parallel fiber interconnects where the light is, for example, coupled into a 12-channel fiber-ribbon. Parallel interconnects require good uniformity in order to reduce escalating costs and complexity. In this paper we report on the static and the modulation properties of 850nm multimode oxide VCSELs for use in such Gb/s transceiver system. Static power-current-voltage characteristics with good uniformity were obtained for different structures, with threshold currents down to sub-mA. A maximum small signal 3-dB bandwidth of 10 GHz and a modulation current efficiency up to 8.4 GHz/√[mA] were measured. Single channel results are presented for VCSELs operated at data rates from 2.5-10Gb/s.
Place, publisher, year, edition, pages
Bellingham, WA, ETATS-UNIS: Society of Photo-Optical Instrumentation Engineers , 2001. Vol. 4286, 96- p.
Telecommunications Atom and Molecular Physics and Optics
IdentifiersURN: urn:nbn:se:kth:diva-89311OAI: oai:DiVA.org:kth-89311DiVA: diva2:502962
Anglais NR 201408052012-02-142012-02-142012-02-15Bibliographically approved