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High-speed visible VCSEL for POF data links
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT. (Photonics)
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT. (Photonics)ORCID iD: 0000-0003-3056-4678
KTH, School of Information and Communication Technology (ICT).
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2000 (English)In: Proc. SPIE 3946, SPIE’s Optoelectronics 2000, Photonics West, San Jose, US, January 2000.: SPIE Optoelectronics, 2000, Vol. 3946, 88-94 p.Conference paper, Published paper (Refereed)
Abstract [en]

We report on two AlGaInP-based visible VCSEL designs based on different current confinement schemes, ion implantation and selective oxidation, and we compare the respective performances with a particular interest on the modulation properties. The implanted device operated continuous wave (CW) up to 40 degrees Celsius. Threshold current of 7 mA, threshold voltage of 2.5 V and maximum optical power of 0.3 mW were measured at room temperature. The small signal modulation responses were fitted using a 3-poles model, allowing the estimation of various parameters such as resonance frequency, damping factor and parasitic cut-off. The maximum 3dB- bandwidth was shown to be 2.1 GHz, limited both by thermal and parasitic effects. 'Error-free' transmission at 1 Gb/s was demonstrated through 50-meter of graded-index POF. The selectivity oxidized devices achieve much higher output power (1.8 mW for the 10 micrometer opening diameter) with threshold current as low a 1.5 mA and threshold voltage of 2.1 V at room temperature, and operate CW up to 49 degrees Celsius. The maximum 3 dB-bandwidth was 4.5 GHz. Modulation current efficiency factor up to 2.8 GHz/(root)[mA] was measured.

Place, publisher, year, edition, pages
2000. Vol. 3946, 88-94 p.
National Category
Telecommunications Atom and Molecular Physics and Optics
Identifiers
URN: urn:nbn:se:kth:diva-89309DOI: 10.1117/12.384364OAI: oai:DiVA.org:kth-89309DiVA: diva2:502969
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SPIE
Note
NR 20140805Available from: 2012-02-14 Created: 2012-02-14 Last updated: 2012-02-15Bibliographically approved

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Publisher's full texthttp://link.aip.org/link/?PSI/3946/88/1http://dx.doi.org/10.1117/12.384364

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Schatz, Richard

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