High-speed visible VCSEL for POF data links
2000 (English)In: Proc. SPIE 3946, SPIE’s Optoelectronics 2000, Photonics West, San Jose, US, January 2000.: SPIE Optoelectronics, 2000, Vol. 3946, 88-94 p.Conference paper (Refereed)
We report on two AlGaInP-based visible VCSEL designs based on different current confinement schemes, ion implantation and selective oxidation, and we compare the respective performances with a particular interest on the modulation properties. The implanted device operated continuous wave (CW) up to 40 degrees Celsius. Threshold current of 7 mA, threshold voltage of 2.5 V and maximum optical power of 0.3 mW were measured at room temperature. The small signal modulation responses were fitted using a 3-poles model, allowing the estimation of various parameters such as resonance frequency, damping factor and parasitic cut-off. The maximum 3dB- bandwidth was shown to be 2.1 GHz, limited both by thermal and parasitic effects. 'Error-free' transmission at 1 Gb/s was demonstrated through 50-meter of graded-index POF. The selectivity oxidized devices achieve much higher output power (1.8 mW for the 10 micrometer opening diameter) with threshold current as low a 1.5 mA and threshold voltage of 2.1 V at room temperature, and operate CW up to 49 degrees Celsius. The maximum 3 dB-bandwidth was 4.5 GHz. Modulation current efficiency factor up to 2.8 GHz/(root)[mA] was measured.
Place, publisher, year, edition, pages
2000. Vol. 3946, 88-94 p.
Telecommunications Atom and Molecular Physics and Optics
IdentifiersURN: urn:nbn:se:kth:diva-89309DOI: 10.1117/12.384364OAI: oai:DiVA.org:kth-89309DiVA: diva2:502969
NR 201408052012-02-142012-02-142012-02-15Bibliographically approved