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High speed modulation characteristics of long wavelength vertical cavity lasers based on an integrated InP Bragg reflector
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT. (Photonics)
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT. (Photonics)ORCID iD: 0000-0003-3056-4678
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1998 (English)In: Optical Communication, 1998. 24th European Conference on, 1998, Vol. 1, 79-80 p.Conference paper, Published paper (Refereed)
Abstract [en]

The high-speed performance of 1.55 mu;m GaInAsP MQW vertical cavity lasers based on a 50-period GaInAsP-InP bottom mirror operating continuous-wave at low temperature is presented. The maximum small-signal modulation bandwidth was limited by parasitics to 3.4 GHz

Place, publisher, year, edition, pages
1998. Vol. 1, 79-80 p.
Keyword [en]
1.55 mu;m GaInAsP MQW vertical cavity lasers;1.55 mum;3.4 GHz;DBR lasers;GaInAsP;GaInAsP-InP;GaInAsP-InP bottom mirror;continuous-wave lasers;high speed modulation characteristics;high-speed performance;integrated InP Bragg reflector;long wavelength vertical cavity lasers;low temperature;maximum small-signal modulation bandwidth;parasitics;III-V semiconductors;distributed Bragg reflector lasers;electro-optical modulation;gallium arsenide;gallium compounds;laser transitions;optical transmitters;quantum well lasers;surface emitting lasers;
National Category
Telecommunications Atom and Molecular Physics and Optics
Identifiers
URN: urn:nbn:se:kth:diva-89301DOI: 10.1109/ECOC.1998.732445OAI: oai:DiVA.org:kth-89301DiVA: diva2:502984
Conference
European Conference on Optical Communication
Note
NR 20140805Available from: 2012-02-14 Created: 2012-02-14 Last updated: 2012-02-14Bibliographically approved

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Schatz, Richard

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