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Modulation and noise measurements from 1520 to 1560 nm in monolithic widely tunable semiconductor lasers
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT. (Photonics)ORCID iD: 0000-0003-3056-4678
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
1998 (English)In: Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on, 1998, 303-304 p.Conference paper, Published paper (Refereed)
Abstract [en]

Widely tunable semiconductor lasers have a large number of applications. We believe we report for the first time measurements of intensity modulation response, frequency, and intensity noise characteristics of a grating-assisted co-directional coupler with rear sampled grating reflector (GCSR) lasers

Place, publisher, year, edition, pages
1998. 303-304 p.
Keyword [en]
1520 to 1560 nm;grating-assisted co-directional coupler;intensity modulation response;intensity noise characteristics;modulation measurements;monolithic widely tunable semiconductor lasers;noise measurements;rear sampled grating reflector lasers;time measurements;widely tunable semiconductor lasers;diffraction gratings;distributed Bragg reflector lasers;infrared sources;laser transitions;laser tuning;noise measurement;optical directional couplers;optical testing;semiconductor device testing;semiconductor lasers;waveguide lasers;
National Category
Telecommunications Atom and Molecular Physics and Optics
Identifiers
URN: urn:nbn:se:kth:diva-89298DOI: 10.1109/CLEO.1998.676198OAI: oai:DiVA.org:kth-89298DiVA: diva2:502991
Conference
Conference on Lasers and Electro-Optics
Note
NR 20140805Available from: 2012-02-14 Created: 2012-02-14 Last updated: 2012-02-14Bibliographically approved

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Schatz, Richard

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